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Strong In-Plane Optical and Electrical Anisotropies of Multilayered γ-InSe for High-Responsivity Polarization-Sensitive Photodetectors.
Pan, Yuan; Zhao, Qixiao; Gao, Feng; Dai, Mingjin; Gao, Wei; Zheng, Tao; Su, Shichen; Li, Jingbo; Chen, Hongyu.
Afiliação
  • Pan Y; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
  • Zhao Q; Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Gao F; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
  • Dai M; Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Gao W; Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150080, P. R. China.
  • Zheng T; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
  • Su S; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
  • Li J; Guangdong Province Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China.
  • Chen H; Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China.
ACS Appl Mater Interfaces ; 14(18): 21383-21391, 2022 May 11.
Article em En | MEDLINE | ID: mdl-35482007
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Diagnostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article