Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices.

Zhang, Li; Chen, Yuanjie; Pan, Dong; Huang, Shaoyun; Zhao, Jianhua; Xu, H Q.

Afiliação

Zhang L; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China.
Chen Y; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China.
Pan D; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
Huang S; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China.
Zhao J; State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, People's Republic of China.
Xu HQ; Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and School of Electronics, Peking University, Beijing 100871, People's Republic of China.

Nanotechnology ; 33(32)2022 May 19.

Article em En | MEDLINE | ID: mdl-35504264