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Elucidating the Reaction Mechanism of Atomic Layer Deposition of Al2O3 with a Series of Al(CH3)xCl3-x and Al(CyH2y+1)3 Precursors.
Oh, Il-Kwon; Sandoval, Tania E; Liu, Tzu-Ling; Richey, Nathaniel E; Nguyen, Chi Thang; Gu, Bonwook; Lee, Han-Bo-Ram; Tonner-Zech, Ralf; Bent, Stacey F.
Afiliação
  • Oh IK; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
  • Sandoval TE; Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea.
  • Liu TL; Chemical and Environmental Engineering Department, Universidad Técnica Federico Santa María, Santiago 8940000, Chile.
  • Richey NE; Department of Material Science and Engineering, Stanford University, Stanford, California 94305, United States.
  • Nguyen CT; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.
  • Gu B; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea.
  • Lee HB; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea.
  • Tonner-Zech R; Department of Material Science Engineering, Incheon National University, Incheon 21999, South Korea.
  • Bent SF; Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstraße 2, Leipzig 04103, Germany.
J Am Chem Soc ; 144(26): 11757-11766, 2022 Jul 06.
Article em En | MEDLINE | ID: mdl-35674504
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article