Your browser doesn't support javascript.
loading
Artificial Synapse Consisted of TiSbTe/SiCx:H Memristor with Ultra-high Uniformity for Neuromorphic Computing.
Chen, Liangliang; Ma, Zhongyuan; Leng, Kangmin; Chen, Tong; Hu, Hongsheng; Yang, Yang; Li, Wei; Xu, Jun; Xu, Ling; Chen, Kunji.
Afiliação
  • Chen L; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Ma Z; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Leng K; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China.
  • Chen T; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Hu H; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Yang Y; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China.
  • Li W; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Xu J; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Xu L; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University, Nanjing 210093, China.
  • Chen K; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel) ; 12(12)2022 Jun 19.
Article em En | MEDLINE | ID: mdl-35745449
ABSTRACT
To enable a-SiCxH-based memristors to be integrated into brain-inspired chips, and to efficiently deal with the massive and diverse data, high switching uniformity of the a-SiC0.11H memristor is urgently needed. In this study, we introduced a TiSbTe layer into an a-SiC0.11H memristor, and successfully observed the ultra-high uniformity of the TiSbTe/a-SiC0.11H memristor device. Compared with the a-SiC0.11H memristor, the cycle-to-cycle coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11H memristors was reduced by 92.5% and 66.4%, respectively. Moreover, the device-to-device coefficient of variation in the high resistance state and the low resistance state of TiSbTe/a-SiC0.11H memristors decreased by 93.6% and 86.3%, respectively. A high-resolution transmission electron microscope revealed that a permanent TiSbTe nanocrystalline conductive nanofilament was formed in the TiSbTe layer during the DC sweeping process. The localized electric field of the TiSbTe nanocrystalline was beneficial for confining the position of the conductive filaments in the a-SiC0.11H film, which contributed to improving the uniformity of the device. The temperature-dependent I-V characteristic further confirmed that the bridge and rupture of the Si dangling bond nanopathway was responsible for the resistive switching of the TiSbTe/a-SiC0.11H device. The ultra-high uniformity of the TiSbTe/a-SiC0.11H device ensured the successful implementation of biosynaptic functions such as spike-duration-dependent plasticity, long-term potentiation, long-term depression, and spike-timing-dependent plasticity. Furthermore, visual learning capability could be simulated through changing the conductance of the TiSbTe/a-SiC0.11H device. Our discovery of the ultra-high uniformity of TiSbTe/a-SiC0.11H memristor devices provides an avenue for their integration into the next generation of AI chips.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article