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Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe2/In2Se3.
Hu, Chen; Chen, Ju; Du, Erwei; Ju, Weiwei; An, Yipeng; Gong, Shi-Jing.
Afiliação
  • Hu C; School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
  • Chen J; School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
  • Du E; School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
  • Ju W; College of Physics and Engineering and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, People's Republic of China.
  • An Y; School of Physics and Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials, Henan Normal University, Xinxiang 453007, People's Republic of China.
  • Gong SJ; School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China.
J Phys Condens Matter ; 34(42)2022 Aug 17.
Article em En | MEDLINE | ID: mdl-35878601
Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe2/In2Se3experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In2Se3, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In2Se3to VSe2, the heterostructure has a type-III band alignment, and the charge transfer from In2Se3into VSe2induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In2Se3is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe2was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe2/In2Se3predicts its wide applications in the fields of both 2D spintronics and multiferroics.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article