Your browser doesn't support javascript.
loading
Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event-Based Pattern Recognition.
Ye, Fan; Kiani, Fatemeh; Huang, Yi; Xia, Qiangfei.
Afiliação
  • Ye F; Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, 01003, USA.
  • Kiani F; Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, 01003, USA.
  • Huang Y; Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, 01003, USA.
  • Xia Q; Department of Electrical and Computer Engineering, University of Massachusetts Amherst, Amherst, MA, 01003, USA.
Adv Mater ; 35(37): e2204778, 2023 Sep.
Article em En | MEDLINE | ID: mdl-36036786
ABSTRACT
A diffusive memristor is a promising building block for brain-inspired computing hardware. However, the randomness in the device relaxation dynamics limits the wide-range adoption of diffusive memristors in large arrays. In this work, the device stack is engineered to achieve a much-improved uniformity in the relaxation time (standard deviation σ reduced from ≈12 to ≈0.32 ms). The memristor is further connected with a resistor or a capacitor and the relaxation time is tuned between 1.13 µs and 1.25 ms, ranging from three orders of magnitude. The hierarchy of time surfaces (HOTS) algorithm, to utilize the tunable and uniform relaxation behavior for spike generation, is implemented. An accuracy of 77.3% is achieved in recognizing moving objects in the neuromorphic MNIST (N-MNIST) dataset. The work paves the way for building emerging neuromorphic computing hardware systems with ultralow power consumption.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article