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Even-Denominator Fractional Quantum Hall State at Filling Factor ν=3/4.
Wang, Chengyu; Gupta, A; Singh, S K; Chung, Y J; Pfeiffer, L N; West, K W; Baldwin, K W; Winkler, R; Shayegan, M.
Afiliação
  • Wang C; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Gupta A; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Singh SK; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Chung YJ; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Pfeiffer LN; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • West KW; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Baldwin KW; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
  • Winkler R; Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA.
  • Shayegan M; Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett ; 129(15): 156801, 2022 Oct 07.
Article em En | MEDLINE | ID: mdl-36269975
ABSTRACT
Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasiparticles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν=3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magnetotransport measurements reveal a strong minimum in the longitudinal resistance at ν=3/4, accompanied by a developing Hall plateau centered at (h/e^{2})/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article