Atomically resolved electronic properties in single layer graphene on &#945;-Al<sub>2</sub>O<sub>3</sub> (0001) by chemical vapor deposition.

Atomically resolved electronic properties in single layer graphene on α-Al₂O₃ (0001) by chemical vapor deposition.

Wördenweber, Henrik; Karthäuser, Silvia; Grundmann, Annika; Wang, Zhaodong; Aussen, Stephan; Kalisch, Holger; Vescan, Andrei; Heuken, Michael; Waser, Rainer; Hoffmann-Eifert, Susanne.

Afiliação

Wördenweber H; Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany.
Karthäuser S; RWTH Aachen University, 52066, Aachen, Germany.
Grundmann A; Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany. s.karthaeuser@fz-juelich.de.
Wang Z; Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany.
Aussen S; Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany.
Kalisch H; RWTH Aachen University, 52066, Aachen, Germany.
Vescan A; Peter Grünberg Institute 7, Forschungszentrum Jülich GmbH and JARA-FIT, 52425, Jülich, Germany.
Heuken M; RWTH Aachen University, 52066, Aachen, Germany.
Waser R; Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany.
Hoffmann-Eifert S; Compound Semiconductor Technology, RWTH Aachen University, 52074, Aachen, Germany.

Sci Rep ; 12(1): 18743, 2022 Nov 05.

Article em En | MEDLINE | ID: mdl-36335187

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article