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Continuous Modulation of Electrocatalytic Oxygen Reduction Activities of Single-Atom Catalysts through p-n Junction Rectification.
Zhuang, Zechao; Xia, Lixue; Huang, Jiazhao; Zhu, Peng; Li, Yong; Ye, Chenliang; Xia, Minggang; Yu, Ruohan; Lang, Zhiquan; Zhu, Jiexin; Zheng, Lirong; Wang, Yu; Zhai, Tianyou; Zhao, Yan; Wei, Shiqiang; Li, Jun; Wang, Dingsheng; Li, Yadong.
Afiliação
  • Zhuang Z; Department of Chemistry, Tsinghua University, Beijing, 100084, China.
  • Xia L; State Key Laboratory of Silicate Materials for Architectures, International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China.
  • Huang J; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
  • Zhu P; Department of Chemistry, Tsinghua University, Beijing, 100084, China.
  • Li Y; Institute of Applied and Physical Chemistry and Center for Environmental Research and Sustainable Technology, University of Bremen, 28359, Bremen, Germany.
  • Ye C; Department of Chemistry, Tsinghua University, Beijing, 100084, China.
  • Xia M; Department of Photoelectronic Information Science and Engineering, School of Science, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Yu R; Nanostructure Research Centre, Wuhan University of Technology, Wuhan, 430070, China.
  • Lang Z; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China.
  • Zhu J; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China.
  • Zheng L; Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
  • Wang Y; Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China.
  • Zhai T; State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
  • Zhao Y; State Key Laboratory of Silicate Materials for Architectures, International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China.
  • Wei S; The Institute of Technological Sciences, Wuhan University, Wuhan, 430072, China.
  • Li J; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, China.
  • Wang D; Department of Chemistry, Tsinghua University, Beijing, 100084, China.
  • Li Y; Department of Chemistry, Tsinghua University, Beijing, 100084, China.
Angew Chem Int Ed Engl ; 62(5): e202212335, 2023 Jan 26.
Article em En | MEDLINE | ID: mdl-36380642
ABSTRACT
Fine-tuning single-atom catalysts (SACs) to surpass their activity limit remains challenging at their atomic scale. Herein, we exploit p-type semiconducting character of SACs having a metal center coordinated to nitrogen donors (MeNx ) and rectify their local charge density by an n-type semiconductor support. With iron phthalocyanine (FePc) as a model SAC, introducing an n-type gallium monosulfide that features a low work function generates a space-charged region across the junction interface, and causes distortion of the FeN4 moiety and spin-state transition in the FeII center. This catalyst shows an over two-fold higher specific oxygen-reduction activity than that of pristine FePc. We further employ three other n-type metal chalcogenides of varying work function as supports, and discover a linear correlation between the activities of the supported FeN4 and the rectification degrees, which clearly indicates that SACs can be continuously tuned by this rectification strategy.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article