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Gradient area-selective deposition for seamless gap-filling in 3D nanostructures through surface chemical reactivity control.
Nguyen, Chi Thang; Cho, Eun-Hyoung; Gu, Bonwook; Lee, Sunghee; Kim, Hae-Sung; Park, Jeongwoo; Yu, Neung-Kyung; Shin, Sangwoo; Shong, Bonggeun; Lee, Jeong Yub; Lee, Han-Bo-Ram.
Afiliação
  • Nguyen CT; Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea.
  • Cho EH; Beyond Silicon Lab, Samsung Advanced Institute of Technology, Gyeonggi, 16678, Korea.
  • Gu B; Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea.
  • Lee S; Beyond Silicon Lab, Samsung Advanced Institute of Technology, Gyeonggi, 16678, Korea.
  • Kim HS; Beyond Silicon Lab, Samsung Advanced Institute of Technology, Gyeonggi, 16678, Korea.
  • Park J; Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea.
  • Yu NK; Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea.
  • Shin S; Department of Mechanical and Aerospace Engineering, University at Buffalo, Buffalo, NY, 14260, USA.
  • Shong B; Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea.
  • Lee JY; Beyond Silicon Lab, Samsung Advanced Institute of Technology, Gyeonggi, 16678, Korea.
  • Lee HB; Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, Korea. hbrlee@inu.ac.kr.
Nat Commun ; 13(1): 7597, 2022 Dec 09.
Article em En | MEDLINE | ID: mdl-36494441
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article