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Near-Infrared Emission of HgTe Nanoplatelets Tuned by Pb-Doping.
Sokolova, Anastasiia V; Skurlov, Ivan D; Babaev, Anton A; Perfenov, Peter S; Miropoltsev, Maksim A; Danilov, Denis V; Baranov, Mikhail A; Kolesnikov, Ilya E; Koroleva, Aleksandra V; Zhizhin, Evgeniy V; Litvin, Aleksandr P; Fedorov, Anatoly V; Cherevkov, Sergei A.
Afiliação
  • Sokolova AV; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Skurlov ID; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Babaev AA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Perfenov PS; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Miropoltsev MA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Danilov DV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia.
  • Baranov MA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Kolesnikov IE; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia.
  • Koroleva AV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia.
  • Zhizhin EV; Research Park, Saint Petersburg State University, Saint Petersburg 199034, Russia.
  • Litvin AP; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
  • Fedorov AV; Laboratory of Quantum Processes and Measurements, ITMO University, Saint Petersburg 197101, Russia.
  • Cherevkov SA; PhysNano Department, ITMO University, Saint Petersburg 197101, Russia.
Nanomaterials (Basel) ; 12(23)2022 Nov 25.
Article em En | MEDLINE | ID: mdl-36500819
Doping the semiconductor nanocrystals is one of the most effective ways to obtain unique materials suitable for high-performance next-generation optoelectronic devices. In this study, we demonstrate a novel nanomaterial for the near-infrared spectral region. To do this, we developed a partial cation exchange reaction on the HgTe nanoplatelets, substituting Hg cations with Pb cations. Under the optimized reaction conditions and Pb precursor ratio, a photoluminescence band shifts to ~1100 nm with a quantum yield of 22%. Based on steady-state and transient optical spectroscopies, we suggest a model of photoexcitation relaxation in the HgTe:Pb nanoplatelets. We also demonstrate that the thin films of doped nanoplatelets possess superior electric properties compared to their pristine counterparts. These findings show that Pb-doped HgTe nanoplatelets are new perspective material for application in both light-emitting and light-detection devices operating in the near-infrared spectral region.
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Ano de publicação: 2022 Tipo de documento: Article