Sliding ferroelectricity in van der Waals layered Î³-InSe semiconductor.

Sui, Fengrui; Jin, Min; Zhang, Yuanyuan; Qi, Ruijuan; Wu, Yu-Ning; Huang, Rong; Yue, Fangyu; Chu, Junhao.

Afiliação

Sui F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Jin M; College of Materials, Shanghai Dianji University, Shanghai, 201306, China.
Zhang Y; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Qi R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. rjqi@ee.ecnu.edu.cn.
Wu YN; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. rjqi@ee.ecnu.edu.cn.
Huang R; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Yue F; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China.
Chu J; Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai, 200062, China. fyyue@ee.ecnu.edu.cn.

Nat Commun ; 14(1): 36, 2023 Jan 03.

Article em En | MEDLINE | ID: mdl-36596789

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article