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Enhancement of Out-of-Plane Spin-Orbit Torque by Interfacial Modification.
Zhao, Tieyang; Liu, Liang; Zhou, Chenghang; Zheng, Zhenyi; Li, Huihui; Xie, Qidong; Yao, Bingqing; Ren, Lizhu; Chai, Jianwei; Dong, Zhili; Zhao, Chao; Chen, Jingsheng.
Afiliação
  • Zhao T; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Liu L; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Zhou C; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China.
  • Zheng Z; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Li H; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Xie Q; Beijing Superstring Academy of Memory Technology, Beijing, 100176, China.
  • Yao B; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Ren L; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Chai J; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Dong Z; Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, 138634, Singapore.
  • Zhao C; School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
  • Chen J; Beijing Superstring Academy of Memory Technology, Beijing, 100176, China.
Adv Mater ; 35(12): e2208954, 2023 Mar.
Article em En | MEDLINE | ID: mdl-36647621
ABSTRACT
Spin-orbit torque (SOT)-induced switching of perpendicular magnetization in the absence of magnetic field is crucial for the application of SOT-based spintronic devices. Recent works have demonstrated that the low-symmetry crystal structure in CuPt/CoPt can give rise to an out-of-plane (OOP) spin torque and lead to deterministic magnetization switching without an external field. However, it is essential to improve OOP effective field for the efficient switching. In this work, the impact of interface oxidation on the generation of OOP effective field in a CuPt/ferromagnet heterostructure is systematically studied. By introducing an oxidized CuPt surface, it is found that the field-free switching performance shows remarkable improvement. OOP effective field measurement indicates that the oxidation treatment can enhance the OOP effective field by more than two times. It is also demonstrated that this oxidation-induced OOP SOT efficiency enhancement is independent of the device shapes, magnetic materials, or magnetization easy axis. This work contributes to improve the performance of SOT devices and provides an effective fabrication guidance for future spintronic devices that utilize OOP SOT.
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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Guideline Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Guideline Idioma: En Ano de publicação: 2023 Tipo de documento: Article