Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics.

Li, Jinghai; Babuji, Adara; Fijahi, Lamiaa; James, Ann Maria; Resel, Roland; Salzillo, Tommaso; Pfattner, Raphael; Ocal, Carmen; Barrena, Esther; Mas-Torrent, Marta

Li, Jinghai; Babuji, Adara; Fijahi, Lamiaa; James, Ann Maria; Resel, Roland; Salzillo, Tommaso; Pfattner, Raphael; Ocal, Carmen; Barrena, Esther; Mas-Torrent, Marta.

Afiliação

Li J; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
Babuji A; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
Fijahi L; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
James AM; Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz8010, Austria.
Resel R; Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, Graz8010, Austria.
Salzillo T; Dipartimento di Chimica Industriale "Toso Montanari", University of Bologna, Viale del Risorgimento 4, 40136Bologna, Italy.
Pfattner R; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
Ocal C; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
Barrena E; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.
Mas-Torrent M; Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193Bellaterra, Spain.