Effect of vacancy ordering on the grain growth of Ge2Sb2Te5film.

Effect of vacancy ordering on the grain growth of Ge₂Sb₂Te₅film.

Liu, Cheng; Tang, Qiongyan; Zheng, Yonghui; Zhao, Jin; Song, Wenxiong; Cheng, Yan.

Afiliação

Liu C; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, People's Republic of China.
Tang Q; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, People's Republic of China.
Zheng Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, People's Republic of China.
Zhao J; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Song W; Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China.
Cheng Y; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.

Nanotechnology ; 34(15)2023 Feb 02.

Article em En | MEDLINE | ID: mdl-36652702