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Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe4.
Wang, Cong; Xiao, Rui-Chun; Liu, Huiying; Zhang, Zhaowei; Lai, Shen; Zhu, Chao; Cai, Hongbing; Wang, Naizhou; Chen, Shengyao; Deng, Ya; Liu, Zheng; Yang, Shengyuan A; Gao, Wei-Bo.
Afiliação
  • Wang C; College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing100029, China.
  • Xiao RC; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore.
  • Liu H; Institute of Physical Science and Information Technology, Anhui University, Hefei230601, China.
  • Zhang Z; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore.
  • Lai S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore.
  • Zhu C; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore.
  • Cai H; School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore.
  • Wang N; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore.
  • Chen S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore.
  • Deng Y; CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing100190, China.
  • Liu Z; School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore.
  • Yang SA; School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore.
  • Gao WB; Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore.
Natl Sci Rev ; 9(12): nwac020, 2022 Dec.
Article em En | MEDLINE | ID: mdl-36694799
The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article