Controllable Oxidation of ZrS<sub>2</sub> to Prepare High-&#954;, Single-Crystal m-ZrO<sub>2</sub> for 2D Electronics.

Controllable Oxidation of ZrS₂ to Prepare High-κ, Single-Crystal m-ZrO₂ for 2D Electronics.

Jin, Yuanyuan; Sun, Jian; Zhang, Ling; Yang, Junqiang; Wu, Yangwu; You, Bingying; Liu, Xiao; Leng, Kai; Liu, Song.

Afiliação

Jin Y; State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
Sun J; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China.
Zhang L; School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China.
Yang J; State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
Wu Y; School of Physics and Electronics, Central South University, Changsha, 410083, P. R. China.
You B; State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
Liu X; Department of Information Technology, Ghent University, Technologiepark-Zwijnaarde 15, Gent, 9052, Belgium.
Leng K; State Key Laboratory of Chem/Bio-Sensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China.
Liu S; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 100872, P. R. China.