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Measuring Band Modulation of MoS2 with Ferroelectric Gates.
Sun, Xinzuo; Chen, Yan; Zhao, Dongyang; Taniguchi, Takashi; Watanabe, Kenji; Wang, Jianlu; Xue, Jiamin.
Afiliação
  • Sun X; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Chen Y; Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.
  • Zhao D; Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China.
  • Taniguchi T; Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China.
  • Watanabe K; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Wang J; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Xue J; Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China.
Nano Lett ; 23(6): 2114-2120, 2023 Mar 22.
Article em En | MEDLINE | ID: mdl-36867589
Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS2 modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to ∼0.62 V/nm through the MoS2 layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article