GaN surface acoustic wave filter with low insertion loss.

Ai, Yujie; Lv, Hongrui; Wang, Ye; Liu, Zhe; He, Yawei; Lin, Defeng; Jia, Lifang; Zhang, Yun.

Afiliação

Ai Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Lv H; Chongqing United Micro-Electronics Ctr, Chongqing 401332, China.
Wang Y; Dept. of Electronic and Information Engineering, Lishui University, Lishui 323000, China.
Liu Z; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
He Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Lin D; Lishui Zhongke Semiconductor Material Co., Ltd, Lishui 323000, China.
Jia L; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
Zhang Y; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China. Electronic address: yzhang34@semi.ac.cn.

Ultrasonics ; 132: 106988, 2023 Jul.

Article em En | MEDLINE | ID: mdl-37003206