Reversible Diode with Tunable Band Alignment for Photoelectricity-Induced Artificial Synapse.

Zhang, Chi; Ning, Jing; Lu, Wei; Wang, Boyu; Cui, Xuan; Zhu, Xiaoxiao; Shen, Xue; Feng, Xin; Wang, Yanbo; Wang, Dong; Wang, Xinran; Zhang, Jincheng; Hao, Yue

Zhang, Chi; Ning, Jing; Lu, Wei; Wang, Boyu; Cui, Xuan; Zhu, Xiaoxiao; Shen, Xue; Feng, Xin; Wang, Yanbo; Wang, Dong; Wang, Xinran; Zhang, Jincheng; Hao, Yue.

Afiliação

Zhang C; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Ning J; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Lu W; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Wang B; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Cui X; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Zhu X; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Shen X; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Feng X; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Wang Y; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Wang D; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Wang X; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.
Zhang J; Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, 710071, P. R. China.
Hao Y; The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, P. R. China.