Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment.

Feng, Junhao; Jeon, Sang-Hwa; Park, Jaehoon; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk

Feng, Junhao; Jeon, Sang-Hwa; Park, Jaehoon; Lee, Sin-Hyung; Jang, Jaewon; Kang, In Man; Kim, Do-Kyung; Bae, Jin-Hyuk.

Afiliação

Feng J; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Jeon SH; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Park J; Department of Electronic Engineering, Hallym University, Chuncheon 24252, Republic of Korea.
Lee SH; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Jang J; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Kang IM; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Kim DK; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.
Bae JH; School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.

Nanomaterials (Basel) ; 13(11)2023 May 24.

Article em En | MEDLINE | ID: mdl-37299625