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Oriented nucleation in formamidinium perovskite for photovoltaics.
Shi, Pengju; Ding, Yong; Ding, Bin; Xing, Qiyu; Kodalle, Tim; Sutter-Fella, Carolin M; Yavuz, Ilhan; Yao, Canglang; Fan, Wei; Xu, Jiazhe; Tian, Yuan; Gu, Danyu; Zhao, Ke; Tan, Shaun; Zhang, Xu; Yao, Libing; Dyson, Paul J; Slack, Jonathan L; Yang, Deren; Xue, Jingjing; Nazeeruddin, Mohammad Khaja; Yang, Yang; Wang, Rui.
Afiliação
  • Shi P; State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Ding Y; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Ding B; Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, EPFL VALAIS, Sion, Switzerland.
  • Xing Q; Beijing Key Laboratory of Novel Thin-Film Solar Cells, North China Electric Power University, Beijing, China.
  • Kodalle T; Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, EPFL VALAIS, Sion, Switzerland.
  • Sutter-Fella CM; Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA.
  • Yavuz I; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Yao C; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Fan W; Department of Physics, Marmara University, Istanbul, Turkey.
  • Xu J; Laboratory of Advanced Materials, Department of Chemistry, Fudan University, Shanghai, China.
  • Tian Y; State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Gu D; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Zhao K; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Tan S; State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Zhang X; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Yao L; Instrumentation and Service Center for Molecular Sciences, Westlake University, Hangzhou, China.
  • Dyson PJ; State Key Laboratory of Silicon Materials and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Slack JL; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Yang D; Department of Materials Science and Engineering and California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA.
  • Xue J; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Nazeeruddin MK; School of Engineering and Westlake Institute for Advanced Study, Westlake University, Hangzhou, China.
  • Yang Y; Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, EPFL VALAIS, Sion, Switzerland.
  • Wang R; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
Nature ; 620(7973): 323-327, 2023 Aug.
Article em En | MEDLINE | ID: mdl-37344595
ABSTRACT
The black phase of formamidinium lead iodide (FAPbI3) perovskite shows huge promise as an efficient photovoltaic, but it is not favoured energetically at room temperature, meaning that the undesirable yellow phases are always present alongside it during crystallization1-4. This problem has made it difficult to formulate the fast crystallization process of perovskite and develop guidelines governing the formation of black-phase FAPbI3 (refs. 5,6). Here we use in situ monitoring of the perovskite crystallization process to report an oriented nucleation mechanism that can help to avoid the presence of undesirable phases and improve the performance of photovoltaic devices in different film-processing scenarios. The resulting device has a demonstrated power-conversion efficiency of 25.4% (certified 25.0%) and the module, which has an area of 27.83 cm2, has achieved an impressive certified aperture efficiency of 21.4%.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article