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The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector.
Wei, Yingdong; Yao, Chenyu; Han, Li; Zhang, Libo; Chen, Zhiqingzi; Wang, Lin; Lu, Wei; Chen, Xiaoshuang.
Afiliação
  • Wei Y; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Yao C; School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China.
  • Han L; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Zhang L; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Chen Z; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China.
  • Wang L; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
  • Lu W; Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No.1 SubLane Xiangshan, Hangzhou 310024, China.
  • Chen X; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
Sensors (Basel) ; 23(12)2023 Jun 06.
Article em En | MEDLINE | ID: mdl-37420534
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Semicondutores / Radiação Terahertz Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Semicondutores / Radiação Terahertz Idioma: En Ano de publicação: 2023 Tipo de documento: Article