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Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films.
Chen, Shanquan; Chang, Jhong-Yi; Zhang, Qinghua; Li, Qiuyue; Lin, Ting; Meng, Fanqi; Huang, Haoliang; Si, Yangyang; Zeng, Shengwei; Yin, Xinmao; Duong, My Ngoc; Lu, Yalin; Chen, Lang; Guo, Er-Jia; Chen, Hanghui; Chang, Chun-Fu; Kuo, Chang-Yang; Chen, Zuhuang.
Afiliação
  • Chen S; School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
  • Chang JY; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Zhang Q; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Li Q; Department of Electronic Science, East China Normal University, Shanghai, 200241, China.
  • Lin T; NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200124, China.
  • Meng F; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Huang H; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Si Y; Hefei National Research Center for Physical Sciences at the Microscale and Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China.
  • Zeng S; School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
  • Yin X; Department of Physics, Faculty of Science, National University of Singapore, Singapore, 117551, Singapore.
  • Duong MN; Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai, 200444, China.
  • Lu Y; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
  • Chen L; Hefei National Research Center for Physical Sciences at the Microscale and Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, 230026, China.
  • Guo EJ; Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
  • Chen H; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
  • Chang CF; NYU-ECNU Institute of Physics, NYU Shanghai, Shanghai, 200124, China.
  • Kuo CY; Department of Physics, New York University, New York, NY, 10012, USA.
  • Chen Z; Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany.
Adv Sci (Weinh) ; 10(27): e2303630, 2023 Sep.
Article em En | MEDLINE | ID: mdl-37485810
ABSTRACT
The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts are devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, the spin state in epitaxial LaCoO3 thin films is systematically investigated to clarify the mechanism of strain-induced ferromagnetism using element-specific X-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, it is unambiguously demonstrated that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) is practically a low-spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high-spin and low-spin states with a ratio close to 13. From the identification of this spin state ratio, it is inferred that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high-spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films. The study highlights the importance of spin state degrees of freedom, along with thin-film strain engineering, in creating new physical properties that do not exist in bulk materials.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article