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Controllable Resistive Switching in ReS2 /WS2 Heterostructure for Nonvolatile Memory and Synaptic Simulation.
Huang, Feihong; Ke, Congming; Li, Jinan; Chen, Li; Yin, Jun; Li, Xu; Wu, Zhiming; Zhang, Chunmiao; Xu, Feiya; Wu, Yaping; Kang, Junyong.
Afiliação
  • Huang F; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Ke C; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Li J; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Chen L; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315211, P. R. China.
  • Yin J; Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, P. R. China.
  • Li X; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Wu Z; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Zhang C; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Xu F; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Wu Y; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
  • Kang J; Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, P. R. China.
Adv Sci (Weinh) ; 10(28): e2302813, 2023 Oct.
Article em En | MEDLINE | ID: mdl-37530215

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article