Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.

Wang, Zhiheng; Cao, Yanrong; Zhang, Xinxiang; Chen, Chuan; Wu, Linshan; Ma, Maodan; Lv, Hanghang; Lv, Ling; Zheng, Xuefeng; Tian, Wenchao; Ma, Xiaohua; Hao, Yue

Wang, Zhiheng; Cao, Yanrong; Zhang, Xinxiang; Chen, Chuan; Wu, Linshan; Ma, Maodan; Lv, Hanghang; Lv, Ling; Zheng, Xuefeng; Tian, Wenchao; Ma, Xiaohua; Hao, Yue.

Afiliação

Wang Z; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Cao Y; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Zhang X; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Chen C; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Wu L; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Ma M; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Lv H; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Lv L; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Zheng X; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Tian W; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
Ma X; School of Electronics & Mechanical Engineering, Xidian University, Xi'an 710071, China.
Hao Y; State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.