Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors.

Yan, Xingzhen; Li, Bo; Zhang, Yiqiang; Wang, Yanjie; Wang, Chao; Chi, Yaodan; Yang, Xiaotian.

Afiliação

Yan X; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Li B; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Zhang Y; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Wang Y; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Wang C; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Chi Y; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.
Yang X; Key Laboratory of Architectural Cold Climate Energy Management, Ministry of Education, Jilin Jianzhu University, 5088 Xincheng Street, Changchun 130118, China.

Micromachines (Basel) ; 14(11)2023 Nov 18.

Article em En | MEDLINE | ID: mdl-38004978