Nonvolatile Memristive Effect in Few-Layer CrI<sub>3</sub> Driven by Electrostatic Gating.

Fu, ZhuangEn; Samarawickrama, Piumi I; Zhu, Yanglin; Mao, Zhiqiang; Wang, Wenyong; Watanabe, Kenji; Taniguchi, Takashi; Tang, Jinke; Ackerman, John; Tian, Jifa

Nonvolatile Memristive Effect in Few-Layer CrI₃ Driven by Electrostatic Gating.

Fu, ZhuangEn; Samarawickrama, Piumi I; Zhu, Yanglin; Mao, Zhiqiang; Wang, Wenyong; Watanabe, Kenji; Taniguchi, Takashi; Tang, Jinke; Ackerman, John; Tian, Jifa.

Afiliação

Fu Z; Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.
Samarawickrama PI; Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.
Zhu Y; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Mao Z; Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Wang W; Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.
Watanabe K; Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Taniguchi T; Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Tang J; Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.
Ackerman J; Department of Chemical and Biomedical Engineering, University of Wyoming, Laramie, Wyoming 82071, United States.
Tian J; Department of Physics and Astronomy, University of Wyoming, Laramie, Wyoming 82071, United States.