Intensified Phonon Scattering in ZrCoBi Half-Heusler by Noble Metals Doping.
ACS Appl Mater Interfaces
; 16(3): 3502-3508, 2024 Jan 24.
Article
em En
| MEDLINE
| ID: mdl-38192195
ABSTRACT
ZrCoBi-based half-Heuslers have great potential in power generation applications because of their high thermoelectric performance in both p- and n-type constituents. In this work, n-type ZrCoBi with improved thermoelectric performance has been realized by intensifying the phonon scattering via noble metal doping, e.g., Pd and Pt doping. The carrier concentration was effectively tuned to the optimal range, and the lattice thermal conductivity was greatly suppressed via the strong strain field and mass fluctuation scattering brought about by the large difference in atomic size and mass between Pd or Pt and Co. Consequently, the state-of-art figure of merit zT â¼1 was achieved in Pd- or Pt-doped ZrCoBi. In addition, the average zTavg values for ZrCo0.95Pd0.05Bi and ZrCo0.925Pt0.075Bi have reached 0.58 and 0.51, respectively, which are higher than those of most of the reported n-type ZrCoBi-based and ZrCoSb-based half-Heusler alloys.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2024
Tipo de documento:
Article