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Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir-Blodgett films on silicon substrate.
Goloudina, Svetlana; Pasyuta, Vyacheslav; Kirilenko, Demid; Smirnov, Aleksandr; Kasatkin, Igor; Zhizhin, Evgeny; Koroleva, Aleksandra; Sevostiyanov, Evgeny; Panov, Mikhail; Trushlyakova, Valentina; Gofman, Iosif; Svetlichnyi, Valentin; Luchinin, Viktor.
Afiliação
  • Goloudina S; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
  • Pasyuta V; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
  • Kirilenko D; Ioffe Institute, Russian Academy of Sciences, 26 Politekhnicheskaya st., St. Petersburg, 194021, Russia.
  • Smirnov A; Ioffe Institute, Russian Academy of Sciences, 26 Politekhnicheskaya st., St. Petersburg, 194021, Russia.
  • Kasatkin I; Saint Petersburg State University, 7-9 Universitetskaya nab., St. Petersburg, 199034, Russia.
  • Zhizhin E; Saint Petersburg State University, 7-9 Universitetskaya nab., St. Petersburg, 199034, Russia.
  • Koroleva A; Saint Petersburg State University, 7-9 Universitetskaya nab., St. Petersburg, 199034, Russia.
  • Sevostiyanov E; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
  • Panov M; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
  • Trushlyakova V; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
  • Gofman I; Institute of Macromolecular Compounds, Russian Academy of Sciences, 31 Bol'shoy pr. V.O., St. Petersburg, 199004, Russia.
  • Svetlichnyi V; Institute of Macromolecular Compounds, Russian Academy of Sciences, 31 Bol'shoy pr. V.O., St. Petersburg, 199004, Russia.
  • Luchinin V; Saint Petersburg State Electrotechnical University, 5 Prof. Popov st., St. Petersburg, 197376, Russia.
Nanotechnology ; 35(26)2024 Apr 09.
Article em En | MEDLINE | ID: mdl-38522107
ABSTRACT
Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000 °C in vacuum. After rapid thermal annealing of GLC films at 1100 °C and 1200 °C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spintronics.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article