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Vertically Integrated Monolithic Neuromorphic Nanowire Device for Physiological Information Processing.
Liu, Junchi; Jiang, Chengpeng; Wei, Huanhuan; Wang, Zixian; Sun, Lin; Zhang, Song; Ni, Yao; Qu, Shangda; Yang, Lu; Xu, Wentao.
Afiliação
  • Liu J; Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart
  • Jiang C; Shenzhen Research Institute of Nankai University, Shenzhen 518000, China.
  • Wei H; Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart
  • Wang Z; Shenzhen Research Institute of Nankai University, Shenzhen 518000, China.
  • Sun L; Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart
  • Zhang S; Institutes of Physical Science and Information Technology, School of Materials Science and Engineering, Key Laboratory of Structure and Functional Regulation of Hybrid Materials, Anhui University, Ministry of Education, Hefei 230601, China.
  • Ni Y; Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart
  • Qu S; Shenzhen Research Institute of Nankai University, Shenzhen 518000, China.
  • Yang L; Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart
  • Xu W; Shenzhen Research Institute of Nankai University, Shenzhen 518000, China.
Nano Lett ; 24(15): 4336-4345, 2024 Apr 17.
Article em En | MEDLINE | ID: mdl-38567915
ABSTRACT
This study demonstrates the conceptual design and fabrication of a vertically integrated monolithic (VIM) neuromorphic device. The device comprises an n-type SnO2 nanowire bottom channel connected by a shared gate to a p-type P3HT nanowire top channel. This architecture establishes two distinct neural pathways with different response behaviors. The device generates excitatory and inhibitory postsynaptic currents, mimicking the corelease mechanism of bilingual synapses. To enhance the signal processing efficiency, we employed a bipolar spike encoding strategy to convert fluctuating sensory signals to spike trains containing positive and negative pulses. Utilizing the neuromorphic platform for synaptic processing, physiological signals featuring bidirectional fluctuations, including electrocardiogram and breathing signals, can be classified with an accuracy of over 90%. The VIM device holds considerable promise as a solution for developing highly integrated neuromorphic hardware for healthcare and edge intelligence applications.
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanofios Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Nanofios Idioma: En Ano de publicação: 2024 Tipo de documento: Article