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Operando double-edge high-resolution X-ray absorption spectroscopy study of BiVO4 photoanodes.
Piccioni, Alberto; Kopula Kesavan, Jagadesh; Amidani, Lucia; Mazzaro, Raffaello; Berardi, Serena; Caramori, Stefano; Pasquini, Luca; Boscherini, Federico.
Afiliação
  • Piccioni A; Department of Physics and Astronomy, Alma Mater Studiorum - Università di Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy.
  • Kopula Kesavan J; Department of Physics and Astronomy, Alma Mater Studiorum - Università di Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy.
  • Amidani L; The Rossendorf Beamline at the European Synchrotron Radiation Facility, Grenoble, France.
  • Mazzaro R; Department of Physics and Astronomy, Alma Mater Studiorum - Università di Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy.
  • Berardi S; Dipartimento di Chimica e Scienze Parafarmaceutiche, Università di Ferrara, Italy.
  • Caramori S; Dipartimento di Chimica e Scienze Parafarmaceutiche, Università di Ferrara, Italy.
  • Pasquini L; Department of Physics and Astronomy, Alma Mater Studiorum - Università di Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy.
  • Boscherini F; Department of Physics and Astronomy, Alma Mater Studiorum - Università di Bologna, Viale C. Berti Pichat 6/2, 40127 Bologna, Italy.
J Synchrotron Radiat ; 31(Pt 3): 464-468, 2024 May 01.
Article em En | MEDLINE | ID: mdl-38619290
ABSTRACT
High energy resolution fluorescence detected X-ray absorption spectroscopy is a powerful method for probing the electronic structure of functional materials. The X-ray penetration depth and photon-in/photon-out nature of the method allow operando experiments to be performed, in particular in electrochemical cells. Here, operando high-resolution X-ray absorption measurements of a BiVO4 photoanode are reported, simultaneously probing the local electronic states of both cations. Small but significant variations of the spectral lineshapes induced by the applied potential were observed and an explanation in terms of the occupation of electronic states at or near the band edges is proposed.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article