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Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2vdW heterostructure via spin-charge interconversion.
Singh, Anil Kumar; Gao, Weibo; Deb, Pritam.
Afiliação
  • Singh AK; Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
  • Gao W; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 639798, Singapore.
  • Deb P; Department of Physics, Tezpur University (Central University), Tezpur 784028, India.
J Phys Condens Matter ; 36(30)2024 May 03.
Article em En | MEDLINE | ID: mdl-38653260
ABSTRACT
Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS2with promising TE properties and a layer-dependent magnetic CrI3material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI3/1T-MoS2vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr-1and 12.30%, respectively. To this end, the semiconducting CrI3layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of∼3.8×1011/τ∘ Wm-1K-2s-1near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin-orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article