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Addendum: Solution epitaxy of polarization-gradient ferroelectric oxide films with colossal photovoltaic current.
Lin, Chen; Zhang, Zijun; Dai, Zhenbang; Wu, Mengjiao; Liu, Shi; Chen, Jialu; Hua, Chenqiang; Lu, Yunhao; Zhang, Fei; Lou, Hongbo; Dong, Hongliang; Zeng, Qiaoshi; Ma, Jing; Pi, Xiaodong; Zhou, Dikui; Wu, Yongjun; Tian, He; Rappe, Andrew M; Ren, Zhaohui; Han, Gaorong.
Afiliação
  • Lin C; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Zhang Z; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Dai Z; Department of Chemistry, University of Pennsylvania, Philadelphia, PA, 19104-6323, USA.
  • Wu M; Oden Institute for Computational Engineering and Sciences, The University of Texas at Austin, Austin, Texas, 78712, USA.
  • Liu S; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Chen J; Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China.
  • Hua C; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Lu Y; Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Zhejiang University, Hangzhou, 310027, China.
  • Zhang F; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Lou H; Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of physics, Zhejiang University, Hangzhou, 310027, China.
  • Dong H; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Zeng Q; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Ma J; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Pi X; Center for High Pressure Science and Technology Advanced Research, Shanghai, 201203, China.
  • Zhou D; State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100091, China.
  • Wu Y; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Tian H; Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 311215, China.
  • Rappe AM; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Ren Z; Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou, 311100, China.
  • Han G; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Nat Commun ; 15(1): 3878, 2024 May 08.
Article em En | MEDLINE | ID: mdl-38719865
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article