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Field-Free Manipulation of Two-Dimensional Ferromagnet CrTe2 by Spin-Orbit Torques.
Shi, Guoyi; Wang, Fei; Liu, Yakun; Li, Zhaohui; Tan, Hui Ru; Yang, Dongsheng; Soumyanarayanan, Anjan; Yang, Hyunsoo.
Afiliação
  • Shi G; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore.
  • Wang F; Key Laboratory of Magnetic Molecules and Magnetic Information, Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030006, China.
  • Liu Y; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore.
  • Li Z; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore.
  • Tan HR; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore 138634, Singapore.
  • Yang D; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore.
  • Soumyanarayanan A; Institute of Materials Research & Engineering, Agency for Science, Technology & Research (A*STAR), Singapore 138634, Singapore.
  • Yang H; Department of Physics, National University of Singapore, Singapore 117551, Singapore.
Nano Lett ; 2024 Jun 10.
Article em En | MEDLINE | ID: mdl-38856112
ABSTRACT
Electrical manipulation of magnetic states in two-dimensional ferromagnetic systems is crucial in information storage and low-dimensional spintronics. Spin-orbit torque presents a rapid and energy-efficient method for electrical control of the magnetization. In this letter, we demonstrate a wafer-scale spin-orbit torque switching of two-dimensional ferromagnetic states. Using molecular beam epitaxy, we fabricate two-dimensional heterostructures composed of low crystal-symmetry WTe2 and ferromagnet CrTe2 with perpendicular anisotropy. By utilizing out-of-plane spins generated from WTe2, we achieve field-free switching of the CrTe2 perpendicular magnetization. The threshold switching current density in CrTe2/WTe2 is 1.2 × 106 A/cm2, 20 times smaller than that of the CrTe2/Pt control sample even with an external magnetic field. In addition, the switching behavior can be modulated by external magnetic fields and crystal symmetry. Our findings demonstrate a controllable and all-electric manipulation of perpendicular magnetization in a two-dimensional ferromagnet, representing a significant advancement toward the practical implementation of low-dimensional spintronic devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article