Epitaxy of Antimonene Thin Films with Screw Dislocations for the Application of Saturable Absorbers.

ABSTRACT

The exotic optoelectronic properties of antimonene, including strain-induced tunable bandgaps, broad nonlinear refractive response, etc., have evoked profound upsurges for decades. As the screw dislocations break the crystal symmetry and modify interlayer coupling, it is highly desirable to investigate the optical prospects of antimonene with screw dislocations. Herein, controllable epitaxy of spiral ß-antimonene is achieved on Fe3GaTe2 substrates. By fine-tuning growth temperatures, the evolutions of spiral ß-antimonene with non-centrosymmetric stacking are investigated via scanning tunneling microscopy. The effects of interfacial strain and dislocation motion during screw-dislocation-driven growth are also studied. Additionally, a modulation depth of 40.8% and mode locking at 1558 nm with a pulse width of 290 fs are observed in Er-doped pulsed fiber lasers generated with spiral Sb-based saturable absorbers, revealing superior performance that far outstrips reported Sb-based saturable absorbers to date. Our work sheds light on the preparation of Sb films with screw dislocations and demonstrates a promising approach toward fabricating ultrafast optical devices.