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Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared.
Montesinos-Ballester, Miguel; Jöchl, Elsa; Turpaud, Victor; Hillbrand, Johannes; Bertrand, Mathieu; Marris-Morini, Delphine; Gini, Emilio; Faist, Jérôme.
Afiliação
  • Montesinos-Ballester M; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
  • Jöchl E; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
  • Turpaud V; Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay, CNRS, 9112 Palaiseau, France.
  • Hillbrand J; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
  • Bertrand M; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
  • Marris-Morini D; Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay, CNRS, 9112 Palaiseau, France.
  • Gini E; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
  • Faist J; Institute for Quantum Electronics, ETH Zürich, CH-8093 Zürich, Switzerland.
ACS Photonics ; 11(6): 2236-2241, 2024 Jun 19.
Article em En | MEDLINE | ID: mdl-38911845
ABSTRACT
In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.3 cm-1 loss coefficient) have been obtained between 4.6 and 11.2 µm wavelengths (890-1960 cm-1 wavenumber), in both transverse electric (TE) and transverse magnetic (TM) polarization modes. The possibility of monolithically integrating such waveguides with mid-IR sources offers promising perspectives for developing broadband, homogeneously integrated systems.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article