High defect tolerance ß-CsSnI3 perovskite light-emitting diodes.
Mater Horiz
; 11(19): 4730-4736, 2024 Sep 30.
Article
em En
| MEDLINE
| ID: mdl-39005219
ABSTRACT
All-inorganic lead-free CsSnI3 has shown promising potential in optoelectronic applications, particularly in near-infrared perovskite light-emitting diodes (Pero-LEDs). However, non-radiative recombination induced by defects hinders the optoelectronic properties of CsSnI3-based Pero-LEDs, limiting their potential applications. Here, we uncovered that ß-CsSnI3 exhibits higher defect tolerance compared to orthorhombic γ-CsSnI3, offering a potential for enhancing the emission efficiency. We further reported on the deposition and stabilization of highly crystalline ß-CsSnI3 films with the assistance of cesium formate to suppress electron-phonon scattering and reduce nonradiative recombination. This leads to an enhanced photoluminescence quantum yield up to â¼10%. As a result, near-infrared LEDs based on ß-CsSnI3 emitters are achieved with a peak external quantum efficiency of 1.81% and excellent stability under a high current injection of 1.0 A cm-2.
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2024
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Article