Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity.

ABSTRACT

Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are promising devices for the development of spiking neural network (SNN) hardware in neuromorphic vision sensors. In such devices, the conductance state can be controlled by both optical and electrical stimuli, while the typical persistent photoconductivity (PPC) of AOS materials can be used to emulate synaptic functions. However, due to the large band gap of these materials, sensitivity to visible light (red/green/blue) is difficult to accomplish, which hinders applications requiring color discrimination. In this work, we report a 4 µm2 hydrogen-doped (H-doped) indium-gallium-zinc oxide (IGZO) optoelectronic memristor that emulates all of the important rules of SNNs such as short- to long-term memory transition (STM-LTM), paired-pulse facilitation (PPF), spike-time-dependent plasticity (STDP), and learning and forgetting capabilities. By the incorporation of hydrogen gas in the sputtering deposition of IGZO, visible sensitivity was achieved for green and blue wavelengths. Additionally, extremely high light/dark ratios of 179, 93, and 12 are demonstrated for wavelengths of 365, 405, and 505 nm, respectively, due to hydrogen-induced subgap states and device miniaturization. Therefore, the proposed device shows remarkable potential for integration with the pixel circuits of IGZO-based displays with extreme resolution for a true intelligent self-processing display.