RESUMO
Thin films are a type of coating that have a very wide spectrum of applications. They may be used as single layers or composed in multilayer stacks, which significantly extend their applications. One of the most commonly used material for thin films is silicon dioxide, SiO2. Although there are other tools that can be used to measure the thickness of SiO2 films, these tools are very complex and sophisticated. In this article, we propose the use of an exponential two-layer light-material interaction model, throughout its diffuse reflectance spectra, as an alternative for the measurement of the thickness of evaporated SiO2 on Si wafers. The proposed model is evaluated experimentally by means of a 980-nm-thick SiO2 layer evaporated on a Si wafer. The results show that the proposed model has a strong correlation with the thickness measurements obtained using commercial equipment.
RESUMO
We propose obtaining TiO2 films by ICPCVD for the fabrication of low-loss waveguides. The challenge is to produce a dense and homogeneous layer with a high refractive index and low absorption in the visible range. Crystallized layers with features such as grains and amorphous layers have a rather low index for the application targeted, so we aimed for an intermediate state. We investigated the influence of plasma power, pressure, deposition time and annealing temperature on the structural, crystalline, and optical properties in order to tailor them. We showed that crystallization into rutile at the nanoscale occurred during deposition and under wisely chosen conditions, we reached a refractive index of 2.5 at 630 nm without creating interfaces or inhomogeneity in the layer depth. Annealing permits one to further increase the index, up to 2.6. TEM analysis on one sample before and after annealing confirmed the nano-polycrystallization and presence of both anatase and rutile phases and we considered that this intermediate state of crystallization was the best compromise for guided optics.