RESUMO
Breaking the total internal reflection far above a critical angle (i.e., outcoupling deep-trap guided modes) can dramatically improve existing light-emitting devices. Here, we report a deep-trap guided modes outcoupler using densely arranged microstructured hollow cavities. Measurements of the leaky mode dispersions of hollow-cavity gratings accurately quantify the wavelength-dependent outcoupling strength above a critical angle, which is progressively improved over the full visible spectrum by increasing the packing density. Comparing hollow- and filled-cavity gratings, which have identical morphologies except for their inner materials (void vs. solid sapphire), reveals the effectiveness of using the hollow-cavity grating to outcouple deep-trap guided modes, which results from its enhanced transmittance at near-horizontal incidence. Scattering analysis shows that the outcoupling characteristics of a cavity array are dictated by the forward scattering characteristics of their individual cavities, suggesting the importance of a rationally designed single cavity. We believe that a hollow-cavity array tailored for different structures and spectra will lead to a technological breakthrough in any type of light-emitting device.
RESUMO
Two-dimensional high-index-contrast dielectric gratings exhibit unconventional transmission and reflection due to their morphologies. For light-emitting devices, these characteristics help guided modes defeat total internal reflections, thereby enhancing the outcoupling efficiency into an ambient medium. However, the outcoupling ability is typically impeded by the limited index contrast given by pattern media. Here, we report strong-diffraction, high-index-contrast cavity engineered substrates (CESs) in which hexagonally arranged hemispherical air cavities are covered with a 80 nm thick crystallized alumina shell. Wavelength-resolved diffraction measurements and Fourier analysis on GaN-grown CESs reveal that the high-index-contrast air/alumina core/shell patterns lead to dramatic excitation of the low-order diffraction modes. Large-area (1075 × 750 µm(2)) blue-emitting InGaN/GaN light-emitting diodes (LEDs) fabricated on a 3 µm pitch CES exhibit â¼39% enhancement in the optical power compared to state-of-the-art, patterned-sapphire-substrate LEDs, while preserving all of the electrical metrics that are relevant to LED devices. Full-vectorial simulations quantitatively demonstrate the enhanced optical power of CES LEDs and show a progressive increase in the extraction efficiency as the air cavity volume is expanded. This trend in light extraction is observed for both lateral- and flip-chip-geometry LEDs. Measurements of far-field profiles indicate a substantial beaming effect for CES LEDs, despite their few-micron-pitch pattern. Near-to-far-field transformation simulations and polarization analysis demonstrate that the improved extraction efficiency of CES LEDs is ascribed to the increase in emissions via the top escape route and to the extraction of transverse-magnetic polarized light.
RESUMO
In optics, the refractive index of a material and its spatial distribution determine the characteristics of light propagation. Therefore, exploring both low- and high-index materials/structures is an important consideration in this regard. Hollow cavities, which are defined as low-index bases, exhibit a variety of unusual or even unexplored optical characteristics and are used in numerous functionalities including diffraction gratings, localised optical antennas and low-loss resonators. In this report, we discuss the fabrication of hollow cavities of various sizes (0.2-5 µm in diameter) that are supported by conformal dielectric/metal shells, as well as their specific applications in the ultraviolet (photodetectors), visible (light-emitting diodes, solar cells and metalenses), near-infrared (thermophotovoltaics) and mid-infrared (radiative coolers) regions. Our findings demonstrate that hollow cavities tailored to specific spectra and applications can serve as versatile optical platforms to address the limitations of current optoelectronic devices. Furthermore, hollow cavity embedded structures are highly elastic and can minimise the thermal stress caused by high temperatures. As such, future applications will likely include high-temperature devices such as thermophotovoltaics and concentrator photovoltaics.