Detalhe da pesquisa
1.
CMOS-Integrated Ternary Content Addressable Memory using Nanocavity CBRAMs for High Sensing Margin.
Small
; : e2310943, 2024 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-38607261
2.
Self-Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices.
Small
; 19(46): e2303862, 2023 Nov.
Artigo
em Inglês
| MEDLINE | ID: mdl-37452406
3.
Optimizing Ultrathin 2D Transistors for Monolithic 3D Integration: A Study on Directly Grown Nanocrystalline Interconnects and Buried Contacts.
Adv Mater
; : e2314164, 2024 Apr 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-38608715
4.
Study of a Dot-patterning Process on Flexible Materials using Impact Print-Type Hot Embossing Technology.
J Vis Exp
; (158)2020 04 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-32310232