Capillary transfer of soft films.

Existing transfer technologies in the construction of film-based electronics and devices are deeply established in the framework of native solid substrates. Here, we report a capillary approach that enables a fast, robust, and reliable transfer of soft films from liquid in a defect-free manner. This capillary transfer is underpinned by the transfer front of dynamic contact among receiver substrate, liquid, and film, and can be well controlled by a selectable motion direction of receiver substrates at a high speed. We demonstrate in extensive experiments, together with theoretical models and computational analysis, the robust capabilities of the capillary transfer using a versatile set of soft films with a broad material diversity of both film and liquid, surface-wetting properties, and complex geometric patterns of soft films onto various solid substrates in a deterministic manner.

Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry-Perot filter.

Despite the rapidly increasing demand for accurate ultraviolet (UV) detection in various applications, conventional Si-based UV sensors are less accurate due to disruption by visible light. Recently, Ga(Al)N-based photodiodes have attracted great interest as viable platforms that can avoid such issues because their wide bandgap enables efficient detection of UV light and they are theoretically blind to visible and infrared light. However, the heteroepitaxy of a Ga(Al)N layer on sapphire substrates inevitably leads to defects, and the Ga(Al)N photodiode (PD) becomes not perfectly insensible to visible light. Employment of a dielectric stacked UV pass filter is possible to avoid unwanted absorption of visible light, but the angle-dependent pass band limits the detection angle. Here, we have demonstrated the Ag-Al2O3 Fabry-Perot UV pass filter-integrated AlGaN ultraviolet photodiode. The inherent optical extinction characteristics of Ag was utilized to design the fabrication-tolerant UV pass filter with a peak transmittance at ∼325 nm. As the angle of incidence increased, the peak transmission decreased from 45% to 10%, but the relative transmission spectrum remained almost unchanged. By integrating these filters, the visible light rejection ratio (responsivity for 315 nm light to responsivity for 405 nm light) was improved by a factor of 10, reaching a value of 106 at angles of up to 80 degrees.

Stereoscopic artificial compound eyes for spatiotemporal perception in three-dimensional space.

Arthropods' eyes are effective biological vision systems for object tracking and wide field of view because of their structural uniqueness; however, unlike mammalian eyes, they can hardly acquire the depth information of a static object because of their monocular cues. Therefore, most arthropods rely on motion parallax to track the object in three-dimensional (3D) space. Uniquely, the praying mantis (Mantodea) uses both compound structured eyes and a form of stereopsis and is capable of achieving object recognition in 3D space. Here, by mimicking the vision system of the praying mantis using stereoscopically coupled artificial compound eyes, we demonstrated spatiotemporal object sensing and tracking in 3D space with a wide field of view. Furthermore, to achieve a fast response with minimal latency, data storage/transportation, and power consumption, we processed the visual information at the edge of the system using a synaptic device and a federated split learning algorithm. The designed and fabricated stereoscopic artificial compound eye provides energy-efficient and accurate spatiotemporal object sensing and optical flow tracking. It exhibits a root mean square error of 0.3 centimeter, consuming only approximately 4 millijoules for sensing and tracking. These results are more than 400 times lower than conventional complementary metal-oxide semiconductor-based imaging systems. Our biomimetic imager shows the potential of integrating nature's unique design using hardware and software codesigned technology toward capabilities of edge computing and sensing.

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT.

A neuromuscular junction (NMJ) is a particularized synapse that activates muscle fibers for macro-motions, requiring more energy than computation. Emulating the NMJ is thus challenging owing to the need for both synaptic plasticity and high driving power to trigger motions. Here, we present an artificial NMJ using CuInP2S6 (CIPS) as a gate dielectric integrated with an AlGaN/GaN-based high-electron mobility transistor (HEMT). The ferroelectricity of the CIPS is coupled with the two-dimensional electron gas channel in the HEMT, providing a wide programmable current range of 6 picoampere per millimeter to 5 milliampere per millimeter. The large output current window of the CIPS/GaN ferroelectric HEMT (FeHEMT) allows for amplifier-less actuation, emulating the biological NMJ functions of actuation and synaptic plasticity. We also demonstrate the emulation of biological oculomotor dynamics, including in situ object tracking and enhanced stimulus responses, using the fabricated artificial NMJ. We believe that the CIPS/GaN FeHEMT offers a promising pathway for bioinspired robotics and neuromorphic vision.

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer.

Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal-oxide-semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation via simple pulse operation has been hindered by the lack of suitable materials, gate structures, and intrinsic depolarization effects. In this study, we have demonstrated artificial synapses using a GaN-based MOS-HEMT integrated with an α-In2Se3 ferroelectric semiconductor. The van der Waals heterostructure of GaN/α-In2Se3 provides a potential to achieve high-frequency operation driven by a ferroelectrically coupled two-dimensional electron gas (2DEG). Moreover, the semiconducting α-In2Se3 features a steep subthreshold slope with a high ON/OFF ratio (∼1010). The self-aligned α-In2Se3 layer with the gate electrode suppresses the in-plane polarization while promoting the out-of-plane (OOP) polarization of α-In2Se3, resulting in a steep subthreshold slope (10 mV/dec) and creating a large hysteresis (2 V). Furthermore, based on the short-term plasticity (STP) characteristics of the fabricated ferroelectric HEMT, we demonstrated reservoir computing (RC) for image classification. We believe that the ferroelectric GaN/α-In2Se3 HEMT can provide a viable pathway toward ultrafast neuromorphic computing.

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process.

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing.

As machine vision technology generates large amounts of data from sensors, it requires efficient computational systems for visual cognitive processing. Recently, in-sensor computing systems have emerged as a potential solution for reducing unnecessary data transfer and realizing fast and energy-efficient visual cognitive processing. However, they still lack the capability to process stored images directly within the sensor. Here, we demonstrate a heterogeneously integrated 1-photodiode and 1 memristor (1P-1R) crossbar for in-sensor visual cognitive processing, emulating a mammalian image encoding process to extract features from the input images. Unlike other neuromorphic vision processes, the trained weight values are applied as an input voltage to the image-saved crossbar array instead of storing the weight value in the memristors, realizing the in-sensor computing paradigm. We believe the heterogeneously integrated in-sensor computing platform provides an advanced architecture for real-time and data-intensive machine-vision applications via bio-stimulus domain reduction.

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption.

Intersubband (intraband) transitions allow absorption of photons in the infrared spectral regime, which is essential for IR-photodetector and optical communication applications. Among various technologies, nanodisks embedded in nanowires offer a unique opportunity to be utilized in intraband devices due to the ease of tuning the fundamental parameters such as strain distribution, band energy, and confinement of the active region. Here, we show the transverse electric polarized intraband absorption using InGaN/GaN nanodisks cladded by AlGaN. Fourier transform infrared reflection (FTIR) measurement confirms absorption of normal incident in-plane transverse electric polarized photons in the mid-IR regime (wavelength of ~ 15 µm) at room temperature. The momentum matrix of the nanodisk energy states indicates electron transition from the ground state s into the px or py orbital-like excited states. Furthermore, the absorption characteristics depending on the indium composition and nanowire diameter exhibits tunability of the intraband absorption spectra within the nanodisks. We believe nanodisks embedded nanowires is a promising technology for achieving tunable detection of photons in the IR spectrum.

Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction.

Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems1. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials2. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles3. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.

Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging.

The time-of-flight (ToF) principle is a method used to measure distance and construct three-dimensional (3D) images by detecting the time or the phase difference between emitted and back-reflected optical flux. The ToF principle has been employed for various applications including light ranging and detection (LiDAR), machine vision and biomedical engineering; however, bulky system size and slow switching speed have hindered the widespread application of ToF technology. To alleviate these issues, a demonstration of hetero-integration of GaN-based high electron mobility transistors (HEMTs) and GaAs-based vertical cavity surface emitting lasers (VCSELs) on a single platform via a cold-welding method was performed. The hetero-integrated ToF sensors show superior switching performance when compared to silicon-transistor-based systems, miniaturizing size and exhibiting stable ranging and high-resolution depth-imaging. This hetero-integrated system of dissimilar material-based high-performance devices suggests a new pathway towards enabling high-resolution 3D imaging and inspires broader range application of heterogeneously integrated electronics and optoelectronics.

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy.

Although conventional homoepitaxy forms high-quality epitaxial layers1-5, the limited set of material systems for commercially available wafers restricts the range of materials that can be grown homoepitaxially. At the same time, conventional heteroepitaxy of lattice-mismatched systems produces dislocations above a critical strain energy to release the accumulated strain energy as the film thickness increases. The formation of dislocations, which severely degrade electronic/photonic device performances6-8, is fundamentally unavoidable in highly lattice-mismatched epitaxy9-11. Here, we introduce a unique mechanism of relaxing misfit strain in heteroepitaxial films that can enable effective lattice engineering. We have observed that heteroepitaxy on graphene-coated substrates allows for spontaneous relaxation of misfit strain owing to the slippery graphene surface while achieving single-crystalline films by reading the atomic potential from the substrate. This spontaneous relaxation technique could transform the monolithic integration of largely lattice-mismatched systems by covering a wide range of the misfit spectrum to enhance and broaden the functionality of semiconductor devices for advanced electronics and photonics.