Conversion of chirality to twisting via sequential one-dimensional and two-dimensional growth of graphene spirals.

The properties of two-dimensional (2D) van der Waals materials can be tuned through nanostructuring or controlled layer stacking, where interlayer hybridization induces exotic electronic states and transport phenomena. Here we describe a viable approach and underlying mechanism for the assisted self-assembly of twisted layer graphene. The process, which can be implemented in standard chemical vapour deposition growth, is best described by analogy to origami and kirigami with paper. It involves the controlled induction of wrinkle formation in single-layer graphene with subsequent wrinkle folding, tearing and re-growth. Inherent to the process is the formation of intertwined graphene spirals and conversion of the chiral angle of 1D wrinkles into a 2D twist angle of a 3D superlattice. The approach can be extended to other foldable 2D materials and facilitates the production of miniaturized electronic components, including capacitors, resistors, inductors and superconductors.

Ultralow-Loss Phonon Polaritons in the Isotope-Enriched α-MoO3.

α-MoO3, a natural van der Waals (vdWs) material, has received wide attention in nano-optics for supporting highly confined anisotropic phonon polaritons (PhPs) from the mid-infrared to the terahertz region, which opens a new route for manipulating light at the nanoscale. However, its optical loss hinders light manipulation with high efficiency. This work demonstrates that the isotope-enriched Mo element enables ultralow-loss PhPs in the α-MoO3. Raman spectra reveal that the isotope-enriched Mo element in the α-MoO3 allows different optical phonon frequencies by efficiently altering the Reststrahlen band's dispersion. The Mo isotope-enriched α-MoO3 significantly reduces the PhPs' optical loss due to efficient optical coherence, which enhances the propagation length revealed by infrared nanoimaging. These findings suggest that the isotope-enriched α-MoO3 is a new feasible 2D material with an ultralow optical loss for possible high-performance integrated photonics and quantum optics devices.

Construction and physical properties of low-dimensional structures for nanoscale electronic devices.

Over the past decades, construction of nanoscale electronic devices with novel functionalities based on low-dimensional structures, such as single molecules and two-dimensional (2D) materials, has been rapidly developed. To investigate their intrinsic properties for versatile functionalities of nanoscale electronic devices, it is crucial to precisely control the structures and understand the physical properties of low-dimensional structures at the single atomic level. In this review, we provide a comprehensive overview of the construction of nanoelectronic devices based on single molecules and 2D materials and the investigation of their physical properties. For single molecules, we focus on the construction of single-molecule devices, such as molecular motors and molecular switches, by precisely controlling their self-assembled structures on metal substrates and charge transport properties. For 2D materials, we emphasize their spin-related electrical transport properties for spintronic device applications and the role that interfaces among 2D semiconductors, contact electrodes, and dielectric substrates play in the electrical performance of electronic, optoelectronic, and memory devices. Finally, we discuss the future research direction in this field, where we can expect a scientific breakthrough.

Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity.

Indium selenide (InSe) has a high electron mobility and tunable direct band gap, enabling its potential applications to electronic and optoelectronic devices. Here, we report the fabrication of InSe photodetectors with high on/off ratios and ultrahigh photoresponsivity, using ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer films as the top-gate dielectric. Benefiting from the successful suppression of the dark current down to ∼10-14A in the InSe channel by tuning the three different polarization states in ferroelectric P(VDF-TrFE) and improved interface properties using h-BN as a substrate, the ferroelectric-gated InSe photodetectors show a high on/off ratio of over 108, a high photoresponsivity up to 14 250 AW-1, a high detectivity up to 1.63 × 1013 Jones, and a fast response time of 600 µs even at zero-gate voltage. The present results highlight the role of ferroelectric P(VDF-TrFE) in tuning the carrier transport of InSe and may provide an avenue for the development of InSe-based photodetectors.

Insulating SiO2 under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication.

Graphene on SiO2 enables fabrication of Si-technology-compatible devices, but a transfer of these devices from other substrates and direct growth have severe limitations due to a relatively small grain size or device-contamination. Here, we show an efficient, transfer-free way to integrate centimeter-scale, single-crystal graphene, of a quality suitable for electronic devices, on an insulating SiO2 film. Starting with single-crystal graphene grown epitaxially on Ru(0001), a SiO2 film is grown under the graphene by stepwise intercalation of silicon and oxygen. Thin (∼1 nm) crystalline or thicker (∼2 nm) amorphous SiO2 has been produced. The insulating nature of the thick amorphous SiO2 is verified by transport measurements. The device-quality of the corresponding graphene was confirmed by the observation of Shubnikov-de Haas oscillations, an integer quantum Hall effect, and a weak antilocalization effect within in situ fabricated Hall bar devices. This work provides a reliable platform for applications of large-scale, high-quality graphene in electronics.

Quasi-2D Transport and Weak Antilocalization Effect in Few-layered VSe2.

With strong spin-orbit coupling (SOC), ultrathin two-dimensional (2D) transitional metal chalcogenides (TMDs) are predicted to exhibit weak antilocalization (WAL) effect at low temperatures. The observation of WAL effect in VSe2 is challenging due to the relative weak SOC and three-dimensional (3D) transport nature in thick VSe2. Here, we report on the observation of quasi-2D transport and WAL effect in sublimed-salt-assisted low-temperature chemical vapor deposition (CVD) grown few-layered high-quality VSe2 nanosheets. The WAL magnitudes in magnetoconductance can be perfectly fitted by the 2D Hikami-Larkin-Nagaoka (HLN) equation in the presence of strong SOC, by which the spin-orbit scattering length lSO and phase coherence length lϕ have been extracted. The phase coherence length lϕ shows a power law dependence with temperature, lϕ∼ T-1/2, revealing an electron-electron interaction-dominated dephasing mechanism. Such sublimed-salt-assisted growth of high-quality few-layered VSe2 and the observation of WAL pave the way for future spintronic and valleytronic applications.

Observation of the Kondo Effect in Multilayer Single-Crystalline VTe2 Nanoplates.

We report the chemical vapor deposition (CVD) growth, characterization, and low-temperature magnetotransport of 1T phase multilayer single-crystalline VTe2 nanoplates. The transport studies reveal that no sign of intrinsic long-range ferromagnetism but localized magnetic moments exist in the individual multilayer metallic VTe2 nanoplates. The localized moments give rise to the Kondo effect, evidenced by logarithmical increment of resistivity with decreasing temperature and negative magnetoresistance (NMR) regardless of the direction of magnetic field at temperatures below the resistivity minimum. The low-temperature resistivity upturn is well described by the Hamann equation, and the NMR at different temperatures, a manifestation of the magnetization of the localized spins, is well fitted to a Brillouin function for S = 1/2. Density functional theory calculations reveal that the localized magnetic moments mainly come from the interstitial vanadium ions in the VTe2 nanoplates. Our results will shed light on the study of magnetic properties, strong correlation, and many-body physics in two-dimensional metallic transition metal dichalcogenides.

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene.

Grain boundaries (GBs) in polycrystalline graphene scatter charge carriers, which reduces carrier mobility and limits graphene applications in high-speed electronics. Here we report the extraction of the resistivity of GBs and the effect of GBs on carrier mobility by direct four-probe measurements on millimeter-sized graphene bicrystals grown by chemical vapor deposition (CVD). To extract the GB resistivity and carrier mobility from direct four-probe intragrain and intergrain measurements, an electronically equivalent extended 2D GB region is defined based on Ohm's law. Measurements on seven representative GBs find that the maximum resistivities are in the range of several kΩ·µm to more than 100 kΩ·µm. Furthermore, the mobility in these defective regions is reduced to 0.4-5.9‰ of the mobility of single-crystal, pristine graphene. Similarly, the effect of wrinkles on carrier transport can also be derived. The present approach provides a reliable way to directly probe charge-carrier scattering at GBs and can be further applied to evaluate the GB effect of other two-dimensional polycrystalline materials, such as transition-metal dichalcogenides (TMDCs).

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.

The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in two-dimensional materials substitutional doping has been achieved in only a few systems, such as Nb substitutional doping in MoS2. Surface charge transfer is still one of the popular ways to control whether the conduction is dominated by holes or electrons. Here, we demonstrate that a capping layer of cross-linked poly(methyl methacrylate) modifies the potential in a black phosphorus (BP) layer so that conduction in the absence of an external electric field is dominated by electrons, rather than holes. Using this technique to form adjoining regions dominated by hole and electron conduction, a family of novel planar devices, such as BP-gated diodes, BP bidirectional rectifier, and BP logic inverters, can be fabricated. The devices are potentially useful for electronic applications, including rectification and switching.

Effects of induced optical tunable and ferromagnetic behaviors of Ba doped nanocrystalline LaB6.

Multiple nanocrystalline rare-earth hexaborides La1-xBaxB6 have been synthesized via a single step solid-state reaction. The Ba doping effects on crystal structure, grain morphology, magnetic and optical absorption properties were investigated using XRD, FESEM, HRTEM, SQUID magnetometry and optical measurements. The results show that all the Ba-doped hexaborides crystallize in the CsCl-type single phase, indicating the Ba atoms occupied the lattice sites of LaB6. The optical absorption results indicate that the absorption valleys of LaB6 are red-shifted from 622 nm to 780 nm when the Ba doping content increases to x = 0.8. The first-principle calculation results reveal that Ba doping reduces the total kinetic energy of the electrons of LaB6, which lead to the absorption valleys moving toward a higher wavelength. Meanwhile, the band gap of BaB6 obtained from optical absorption is in good agreement with the theoretical calculation results. The magnetic measurements results showed that Ba doping lead to room-temperature ferromagnetism of LaB6 due to the different ionic radii of La(3+) and Ba(2+) causing intrinsic crystal defects, which is directly observed experimentally by HRTEM. This is the first time that we have found the tunable optical and ferromagnetic behavior of Ba doped nanocrystalline LaB6. Thus, nanocrystalline La1-xBaxB6, as multi-functional materials, should open up a new route to extend the optical and magnetic applications of LaB6 nanopowder.

Atomic-scale imaging of cation ordering in inverse spinel Zn2SnO4 nanowires.

By using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) coupled with density functional theory (DFT) calculations, we demonstrate the atomic-level imaging of cation ordering in inverse spinel Zn2SnO4 nanowires. This cation ordering was identified as 1:1 ordering of Zn(2+) and Sn(4+) at the octahedral sites of the inverse spinel crystal with microscopic symmetry transition from original cubic Fd3̅m to orthorhombic Imma group. This ordering generated a 67.8% increase in the elastic modulus and 1-2 order of magnitude lower in the electric conductivity and electron mobility compared to their bulk counterpart.

miR-152 suppresses gastric cancer cell proliferation and motility by targeting CD151.

We aimed to study the post-translational regulation of CD151 by the microRNA miR-152. CD151 is highly expressed in gastric cancer (GC) and has been shown to accelerate GC by enhancing invasion and metastasis; however, its regulation is still unclear. Our results showed decreased expression of miR-152 in GC tissue samples and cell lines. In addition, miR-152 complementation significantly inhibits both the proliferation and motility of GC cells. CD151 was found to be a target of miR-152, and overexpression of CD151 attenuated the suppressive effect of miR-152. Our findings highlight an essential role of miR-152 in the regulation of proliferation and motility of GC cells and suggest a potential application of miR-152 in GC treatment.

Seasonal expression of androgen receptor in scented gland of muskrat (Ondatra zibethicus).

Muskrat is a seasonal breeder, males of which secret musk from paired perineal scented glands found beneath the skin at the ventral base of the tail for attracting female during the breeding season. The aim of this study was to investigate the seasonal changes of expression of androgen receptor (AR) in the scented gland of muskrat during the breeding and nonbreeding seasons. Histologically, glandular cells, interstitial cells and excretory tubules were identified in scented glands in both seasons, whereas epithelial cells were sparse in the nonbreeding season. AR was observed in glandular cells of scented glands during the breeding and nonbreeding seasons with stronger immunostaining during the breeding season compared to the nonbreeding season. Consistent with the immunohistochemical results, AR protein level was higher in the scented glands of the breeding season, and then decreased to a relatively low level in the nonbreeding season. The mean mRNA level of Ar was significantly higher in the breeding season than in the nonbreeding season. In addition, plasma gonadotropins and testosterone concentrations were remarkably higher in the breeding season than those in the nonbreeding season. These results suggested that muskrat scented gland was the direct target organ of androgen, and stronger expression of AR in scented glands during the breeding season suggested that androgens may directly influence scented glandular function of the muskrats and also courtship behavior as we inferred.

Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials.

The explosive growth of massive-data storage and the demand for ultrafast data processing require innovative memory devices with exceptional performance. 2D materials and their van der Waal heterostructures with atomically sharp interfaces hold great promise for innovations in memory devices. Here, this work presents non-volatile, floating-gate memory devices with all functional layers made of 2D materials, achieving ultrafast programming/erasing speeds (20 ns), high extinction ratios (up to 108), and multi-bit storage capability. These devices also exhibit long-term data retention exceeding 10 years, facilitated by a high gate-coupling ratio (GCR) and atomically sharp interfaces between functional layers. Additionally, this work demonstrates the realization of an "OR" logic gate on a single-device unit by synergistic electrical and optical operations. The present results provide a solid foundation for next-generation ultrahigh-speed, ultralong lifespan, non-volatile memory devices, with a potential for scale-up manufacturing and flexible electronics applications.

Room­Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets.

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.

Evidence for multiferroicity in single-layer CuCrSe2.

Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.

Gold-Template-Assisted Mechanical Exfoliation of Large-Area 2D Layers Enables Efficient and Precise Construction of Moiré Superlattices.

Moiré superlattices, consisting of rotationally aligned 2D atomically thin layers, provide a highly novel platform for the study of correlated quantum phenomena. However, reliable and efficient construction of moiré superlattices is challenging because of difficulties to accurately angle-align small exfoliated 2D layers and the need to shun wet-transfer processes. Here, efficient and precise construction of various moiré superlattices is demonstrated by picking up and stacking large-area 2D mono- or few-layer crystals with predetermined crystal axes, made possible by a gold-template-assisted mechanical exfoliation method. The exfoliated 2D layers are semiconductors, superconductors, or magnets and their high quality is confirmed by photoluminescence and Raman spectra and by electrical transport measurements of fabricated field-effect transistors and Hall devices. Twisted homobilayers with angle-twisting accuracy of ≈0.3°, twisted heterobilayers with sub-degree angle-alignment accuracy, and multilayer superlattices are precisely constructed and characterized by their moiré patterns, interlayer excitons, and second harmonic generation. The present study paves the way for exploring emergent phenomena in moiré superlattices.

The Relationship Between Fear Avoidance Belief and Threat Learning in Postoperative Patients After Lung Surgery: An Observational Study.

Background: The role of fear-avoidance beliefs (FAB) in patients with chronic pain has been widely confirmed. However, few conclusions have been drawn about its role in postoperative patients. Objective: To explore the characteristics of FAB in postoperative patients after lung surgery as well as the effect of threat learning on FAB. Methods: Between May and September 2022, this study recruited 150 participants who had undergone thoracoscopic surgery. Variables such as age, gender, education, chronic pain, fear of pain, surgery method, pain intensity, FAB, cough, ambulation and threat learning were collected and subjected to correlation analysis and stepwise regression. Results: The correlation analysis revealed that FAB was associated with age (r = -0.183, p < 0.05), gender (r = -0.256, p < 0.01), and preoperative FOP-9 (r = 0.400, p < 0.01). Postoperative variables such as pain intensity (r = 0.574, p < 0.01), initiation day of ambulation (r = 0.648, p < 0.01), total numbers of ambulation (r = -0.665, p < 0.01), and cough performance (r = -0.688, p < 0.01) were correlated with FAB. Furthermore, FAB was highly correlated with indicators of threat learning: direct (r = 0.556, p < 0.01), observation (r = 0.655, p < 0.01), and instruction (r = 0.671, p < 0.01). The highest variance explanation model of stepwise regression which explained 52.8% of the variance including instruction (B=1.751; p<0.01), direct (B=1.245; p<0.01), observation (B=0.768; p<0.01), age (B=-0.085; p<0.01), and surgery method (B=1.321; p<0.05). Conclusion: Patients commonly experience FAB after lung surgery, which can directly affect their recovery behaviors such as ambulation and active coughing. The formation of FAB is influenced by threat learning, which suggests that controlling threat learning is important in preventing postoperative FAB.

Novel Biomass-Based Polymeric Dyes: Preparation and Performance Assessment in the Dyeing of Biomass-Derived Aldehyde-Tanned Leather.

High-performance chrome-free leather production is currently one of the most concerning needs to warrant the sustainable development of the leather industry due to the serious chrome pollution. Driven by these research challenges, this work explores using biobased polymeric dyes (BPDs) based on dialdehyde starch and reactive small-molecule dye (reactive red 180, RD-180) as novel dyeing agents for leather tanned using a chrome-free, biomass-derived aldehyde tanning agent (BAT). FTIR, 1H NMR, XPS, and UV-visible spectrometry analyses indicated that a Schiff base structure was generated between the aldehyde group of dialdehyde starch (DST) and the amino group of RD-180, resulting in the successful load of RD-180 on DST to produce BPD. The BPD could first penetrate the BAT-tanned leather efficiently and then be deposited on the leather matrix, thus exhibiting a high uptake ratio. Compared with the crust leathers prepared using a conventional anionic dye (CAD), dyeing, and RD-180 dyeing, the BPD-dyed crust leather not only had better coloring uniformity and fastness but it also showed a higher tensile strength, elongation at break, and fullness. These data suggest that BPD has the potential to be used as a novel sustainable polymeric dye for the high-performance dyeing of organically tanned chrome-free leather, which is paramount to ensuring and promoting the sustainable development of the leather industry.

Tunable heterostructural prism for planar polaritonic switch.

The study of phonon polaritons in van der Waals materials at the nanoscale has gained significant attention in recent years due to its potential applications in nanophotonics. The unique properties of these materials, such as their ability to support sub-diffraction imaging, sensing, and hyperlenses, have made them a promising avenue for the development of new techniques in the field. Despite these advancements, there still exists a challenge in achieving dynamically reversible manipulation of phonon polaritons in these materials due to their insulating properties. In this study, we present experimental results on the reversible manipulation of anisotropic phonon polaritons in α-MoO3 on top of a VO2 film, a phase-change material known for its dramatic changes in dielectric properties between its insulating and metallic states. Our findings demonstrate that the engineered VO2 film enables a switch in the propagation of polaritons in the mid-infrared region by modifying the dielectric properties of the film through temperature changes. Our results represent a promising approach to effectively control the flow of light energy at the nanoscale and offer the potential for the design and fabrication of integrated, flat sub-diffraction polaritonic devices. This study adds to the growing body of work in the field of nanophotonics and highlights the importance of considering phase-change materials for the development of new techniques in this field.