III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers.

Group III-nitride semiconductors have been subject of intensive research, resulting in the maturing of the material system and adoption of III-nitrides in modern optoelectronics and power electronic devices. Defined film polarity is an important aspect of III-nitride epitaxy as the polarity affects the design of electronic devices. Magnetron sputtering is a novel approach for cost-effective epitaxy of III-nitrides nearing the technological maturity needed for device production; therefore, control of film polarity is an important technological milestone. In this study, we show the impact of Al seeding on the AlN/Si interface and resulting changes in crystal quality, film morphology, and polarity of GaN/AlN stacks grown by magnetron sputter epitaxy. X-ray diffraction measurements demonstrate the improvement of the crystal quality of the AlN and subsequently the GaN film by the Al seeding. Nanoscale structural and chemical investigations using scanning transmission electron microscopy reveal the inversion of the AlN film polarity. It is proposed that N-polar growth induced by Al seeding is related to the formation of a polycrystalline oxygen-rich AlN interlayer partially capped by an atomically thin Si-rich layer at the AlN/Si interface. Complementary aqueous KOH etch studies of GaN/AlN stacks demonstrate that purely metal-polar and N-polar layers can be grown on a macroscopic scale by controlling the amount of Al seeding.

Multiscale morphological analysis of bone microarchitecture around Mg-10Gd implants.

The utilization of biodegradable magnesium (Mg)-based implants for restoration of bone function following trauma represents a transformative approach in orthopaedic application. One such alloy, magnesium-10 weight percent gadolinium (Mg-10Gd), has been specifically developed to address the rapid degradation of Mg while enhancing its mechanical properties to promote bone healing. Previous studies have demonstrated that Mg-10Gd exhibits favorable osseointegration; however, it exhibits distinct ultrastructural adaptation in comparison to conventional implants like titanium (Ti). A crucial aspect that remains unexplored is the impact of Mg-10Gd degradation on the bone microarchitecture. To address this, we employed hierarchical three-dimensional imaging using synchrotron radiation in conjunction with image-based finite element modelling. By using the methods outlined, the vascular porosity, lacunar porosity and the lacunar-canaliculi network (LCN) morphology of bone around Mg-10Gd in comparison to Ti in a rat model from 4 weeks to 20 weeks post-implantation was investigated. Our investigation revealed that within our observation period, the degradation of Mg-10Gd implants was associated with significantly lower (p < 0.05) lacunar density in the surrounding bone, compared to Ti. Remarkably, the LCN morphology and the fluid flow analysis did not significantly differ for both implant types. In summary, a more pronounced lower lacunae distribution rather than their morphological changes was detected in the surrounding bone upon the degradation of Mg-10Gd implants. This implies potential disparities in bone remodelling rates when compared to Ti implants. Our findings shed light on the intricate relationship between Mg-10Gd degradation and bone microarchitecture, contributing to a deeper understanding of the implications for successful osseointegration.