High-Q Trampoline Resonators from Strained Crystalline InGaP for Integrated Free-Space Optomechanics.

Nanomechanical resonators realized from tensile-strained materials reach ultralow mechanical dissipation in the kHz to MHz frequency range. Tensile-strained crystalline materials that are compatible with epitaxial growth of heterostructures would thereby at the same time allow realizing monolithic free-space optomechanical devices, which benefit from stability, ultrasmall mode volumes, and scalability. In our work, we demonstrate nanomechanical string and trampoline resonators made from tensile-strained InGaP, which is a crystalline material that is epitaxially grown on an AlGaAs heterostructure. We characterize the mechanical properties of suspended InGaP nanostrings, such as anisotropic stress, yield strength, and intrinsic quality factor. We find that the latter degrades over time. We reach mechanical quality factors surpassing 107 at room temperature with a Q·f product as high as 7 × 1011Hz with trampoline-shaped resonators. The trampoline is patterned with a photonic crystal to engineer its out-of-plane reflectivity, desired for efficient signal transduction of mechanical motion to light.

Laser-assisted local metal-organic vapor phase epitaxy.

Selective area epitaxial growth is an important technique, both for monolithic device integration as well as for defect reduction in heteroepitaxy of crystalline materials on foreign substrates. While surface engineering with masking materials or by surface structuring is an effective means for controlling the location of material growth, as well as for improving crystalline properties of epitaxial layers, the commonly involved integral substrate heating presents a limitation, e.g., due to constraints ofr the thermal budget applicable to existing device structures. As a solution, an epitaxial growth approach using a laser source only locally heating the selected growth area, in combination with metal-organic precursors to feed a pyrolithic chemical reaction (also known as metal-organic vapor phase epitaxy, MOVPE), is presented. Without masking or surface structuring, local epitaxial growth of III-V compound semiconductor layers on a 50-1500 µm length-scale, with high structural and optical quality, is demonstrated. We discuss general design rules for reactor chamber, laser heating, temperature measurement, sample manipulation, gas mixing, and distinguish laser-assisted local MOVPE from conventional planar growth for the important compound semiconductor GaAs. Surface de-oxidation prior to growth is mandatory to realize smooth island surfaces. Linear growth rates in the range 0.5-9 µm/h are demonstrated. With increasing island diameter, the probability for plastic deformation within the island increases, depending on reactor pressure. A step-flow mode on the island surface can be achieved by establishing a sufficiently small temperature gradient across the island.