Spatial Control of the Self-assembled Block Copolymer Domain Orientation and Alignment on Photopatterned Surfaces.

Polarity-switching photopatternable guidelines can be directly used to both orient and direct the self-assembly of block copolymers. We report the orientation and alignment of poly(styrene-block-4-trimethylsilylstyrene) (PS-b-PTMSS) with a domain periodicity, L0, of 44 nm on thin photopatternable grafting surface treatments (pGSTs) and cross-linkable surface treatments (pXSTs), containing acid-labile 4-tert-butoxystyrene monomer units. The surface treatment was exposed using electron beam lithography to create well-defined linear arrays of neutral and preferential regions. Directed self-assembly (DSA) of PS-b-PTMSS with much lower defectivity was observed on pXST than on pGST guidelines. The study of the effect of film thickness on photoacid diffusion by Fourier transform infrared spectroscopy and near-edge X-ray absorption fine structure spectroscopy suggested slower diffusion in thinner films, potentially enabling production of guidelines with sharper interfaces between the unexposed and exposed lines, and thus, the DSA of PS-b-PTMSS on thinner pXST guidelines resulted in better alignment control.

Characterizing the Interface Scaling of High χ Block Copolymers near the Order-Disorder Transition.

Advancements in the directed self-assembly of block copolymers (BCPs) have prompted the development of new materials with larger effective interaction parameters (χe). This enables BCP systems with phase separation at increasingly small degrees of polymerization (N). Very often these systems reside near the order-disorder transition and fit between the weak and strong segregation limits where the behavior of BCP systems is not as thoroughly understood. Utilizing resonant soft X-ray reflectivity (RSoXR) enables both the BCP pitch (L0) and interface width (wM) to be determined simultaneously, through a direct characterization of the composition profile of BCP lamellae oriented parallel to a substrate. A series of high χe BCPs with χe ranging from ≈0.04 to 0.25 and χeN from 19 to 70 have been investigated. The L0/wm ratio serves as an important metric for the feasibility of a material for nanopatterning applications; the results of the RSoXR measurement are used to establish a relationship between χe and L0/wm. The results of this analysis are correlated with experimentally established limits for the functionality of BCPs in nanopatterning applications. These results also provide guidance for the magnitude of χe needed to achieve small interface width for samples with sub-10 nm L0.

Influence of topographically patterned angled guidelines on directed self-assembly of block copolymers.

Single chain in mean-field Monte Carlo simulations were employed to study the self-assembly of block copolymers (BCP) in thin films that use trapezoidal guidelines to direct the orientation and alignment of lamellar patterns. The present study explored the influence of sidewall interactions and geometry of the trapezoidal guidelines on the self-assembly of perpendicularly oriented lamellar morphologies. When both the sidewall and the top surface exhibit preferential interactions to the same block of the BCP, trapezoidal guidelines with intermediate taper angles were found to result in less defective perpendicularly orientated morphologies. Similarly, when the sidewall and top surface are preferential to distinct blocks of the BCP, intermediate tapering angles were found to be optimal in promoting defect free structures. Such results are rationalized based on the energetics arising in the formation of perpendicularly oriented lamella on patterned substrates.

Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellae.

The directed self-assembly (DSA) and pattern transfer of poly(5-vinyl-1,3-benzodioxole-block-pentamethyldisilylstyrene) (PVBD-b-PDSS) is reported. Lamellae-forming PVBD-b-PDSS can form well resolved 5 nm (half-pitch) features in thin films with high etch selectivity. Reactive ion etching was used to selectively remove the PVBD block, and fingerprint patterns were subsequently transferred into an underlying chromium hard mask and carbon layer. DSA of the block copolymer (BCP) features resulted from orienting PVBD-b-PDSS on guidelines patterned by nanoimprint lithography. A density multiplication factor of 4× was achieved through a hybrid chemo-/grapho-epitaxy process. Cross-sectional scanning tunneling electron microscopy/electron energy loss spectroscopy (STEM/EELS) was used to analyze the BCP profile in the DSA samples. Wetting layers of parallel orientation were observed to form unless the bottom and top surface were neutralized with a surface treatment and top coat, respectively.

Structure, Stability, and Reorganization of 0.5 L0 Topography in Block Copolymer Thin Films.

The structure, stability, and reorganization of lamella-forming block copolymer thin film surface topography ("islands" and "holes") were studied under boundary conditions driving the formation of 0.5 L0 thick structures at short thermal annealing times. Self-consistent field theory predicts that the presence of one perfectly neutral surface renders 0.5 L0 topography thermodynamically stable relative to 1 L0 thick features, in agreement with previous experimental observations. The calculated through-film structures match cross-sectional scanning electron micrographs, collectively demonstrating the pinning of edge dislocations at the neutral surface. Remarkably, near-neutral surface compositions exhibit 0.5 L0 topography metastability upon extended thermal treatment, slowly transitioning to 1 L0 islands or holes as evidenced by optical and atomic force microscopy. Surface restructuring is rationalized by invoking commensurability effects imposed by slightly preferential surfaces. The results described herein clarify the impact of interfacial interactions on block copolymer self-assembly and solidify an understanding of 0.5 L0 topography, which is frequently used to determine neutral surface compositions of considerable importance to contemporary technological applications.

Pattern Transfer of Sub-10 nm Features via Tin-Containing Block Copolymers.

Tin-containing block copolymers were investigated as materials for nanolithographic applications. Poly(4-trimethylstannylstyrene-block-styrene) (PSnS-PS) and poly(4-trimethylstannylstyrene-block-4-methoxystyrene) (PSnS-PMOST) synthesized by reversible addition-fragmentation chain transfer polymerization form lamellar domains with periodicities ranging from 18 to 34 nm. Thin film orientation control was achieved by thermal annealing between a neutral surface treatment and a top coat. Incorporation of tin into one block facilitates pattern transfer into SiO2 via a two-step etch process utilizing oxidative and fluorine-based etch chemistries.

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST.

The directed self-assembly (DSA) of two sub-20 nm pitch silicon-containing block copolymers (BCPs) was accomplished using a double-patterned sidewall scheme in which each lithographic prepatterned feature produced two regions for pattern registration. In doing so, the critical dimension of the lithographic prepatterns was relaxed by a factor of 2 compared to previously reported schemes for DSA. The key to enabling the double-patterned sidewall scheme is the exploitation of the oxidized sidewalls of cross-linked polystyrene formed during the pattern transfer of the resist via reactive ion etching. This results in shallow trenches with two guiding interfaces per prepatterned feature. Electron loss spectroscopy was used to study and confirm the guiding mechanism of the double-patterned sidewalls, and pattern transfer of the BCPs into a silicon substrate was achieved using reactive ion etching. The line edge roughness, width roughness, and placement error are near the target required for bit-patterned media applications, and the technique is also compatible with the needs of the semiconductor industry for high-volume manufacturing.

Directed self-assembly of silicon-containing block copolymer thin films.

The directed self-assembly (DSA) of lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-PTMSS, L0=22 nm) was achieved using a combination of tailored top interfaces and lithographically defined patterned substrates. Chemo- and grapho-epitaxy, using hydrogen silsesquioxane (HSQ) based prepatterns, achieved density multiplications up to 6× and trench space subdivisions up to 7×, respectively. These results establish the compatibility of DSA techniques with a high etch contrast, Si-containing BCP that requires a top coat neutral layer to enable orientation.

Photopatternable Interfaces for Block Copolymer Lithography.

Directly photopatternable interfaces are introduced that facilitate two-dimensional spatial control of block copolymer (BCP) orientation in thin films. Copolymers containing an acid labile monomer were synthesized, formulated with a photoacid generator (PAG), and coated to create grafted surface treatments (GSTs). These as-cast GST films are either inherently neutral or preferential (but not both) to lamella-forming poly(styrene-block-trimethylsilylstyrene) (PS-b-PTMSS). Subsequent contact printing and baking produced GSTs with submicron chemically patterned gratings. The catalytic reaction of the photoacid generated in the UV-exposed regions of the GSTs changed the interfacial interactions between the BCP and the GST in one of two ways: from neutral to preferential ("N2P") or preferential to neutral ("P2N"). When PS-b-PTMSS was thermally annealed between a chemically patterned GST and a top coat, alternating regions of perpendicular and parallel BCP lamellae were formed.

Polarity-switching top coats enable orientation of sub-10-nm block copolymer domains.

Block copolymers (BCPs) must necessarily have high interaction parameters (χ), a fundamental measure of block incompatibility, to self-assemble into sub-10-nanometer features. Unfortunately, a high χ often results from blocks that have disparate interfacial energies, which makes the formation of useful thin-film domain orientations challenging. To mitigate interfacial forces, polymers composed of maleic anhydride and two other components have been designed as top coats that can be spin-coated from basic aqueous solution in the ring-opened, acid salt form. When baked, the anhydride reforms and switches polarity to create a neutral layer enabling BCP feature alignment not possible by thermal annealing alone. Top coats were applied to the lamella-forming block copolymers poly(styrene-block-trimethylsilylstyrene-block-styrene) and poly(trimethylsilylstyrene-block-lactide), which were thermally annealed to produce perpendicular features with linewidths of 15 and 9 nanometers, respectively.