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1.
J Synchrotron Radiat ; 26(Pt 2): 467-472, 2019 Mar 01.
Artigo em Inglês | MEDLINE | ID: mdl-30855257

RESUMO

This article reports on the fabrication and testing of dedicated Fresnel zone plates for use at the nano-ARPES branch of the I05-ARPES beamline of Diamond Light Source to perform angle-resolved photoelectron spectroscopy with sub-micrometre resolution in real space. The aim of the design was to provide high photon flux combined with sub-micrometre spot sizes. The focusing lenses were tested with respect to efficiency and spatial resolution in the extreme ultraviolet between 50 eV and 90 eV. The experimentally determined diffraction efficiencies of the zone plates are as high as 8.6% at 80 eV, and a real-space resolution of 0.4 µm was demonstrated. Using the zone-plate-based setup, monolayer flakes of the two-dimensional semiconductor WS2 were investigated. This work demonstrates that the local electronic structure can be obtained from an area of a few micrometres across a two-dimensional heterostructure.

2.
Opt Lett ; 39(5): 1185-8, 2014 Mar 01.
Artigo em Inglês | MEDLINE | ID: mdl-24690702

RESUMO

A surface structured extreme ultraviolet multilayer mirror was developed showing full band suppression of UV (λ=100-400 nm) and simultaneously a high reflectance of EUV light (λ=13.5 nm). The surface structure consists of Si pyramids, which are substantially transparent for EUV but reflective for UV light. The reflected UV is filtered out by blazed diffraction, interference, and absorption. A first demonstration pyramid structure was fabricated on a multilayer by using a straightforward deposition technique. It shows an average suppression of 14 times over the whole UV range and an EUV reflectance of 56.2% at 13.5 nm. This robust scheme can be used as a spectral purity solution for all XUV sources that emit longer wavelength radiation as well.

3.
Appl Opt ; 51(36): 8541-8, 2012 Dec 20.
Artigo em Inglês | MEDLINE | ID: mdl-23262592

RESUMO

We studied the structure and optical properties of B(4)C/Mo/Y/Si multilayer systems. Using extended x-ray absorption fine structure measurements at the Y and Mo K-edge, the structure of the subnanometer thick Y layer and the underlying Mo layer were analyzed. It was found that even a 0.2 nm thick Y layer significantly reduced silicon diffusion toward Mo, thus reducing Mo silicide formation. Hard x-ray reflectometry showed that the difference in average interface roughness of the B(4)C/Mo/Y/Si multilayer structure compared to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures was negligible. Soft x-ray reflectometry showed optical improvement of B(4)C/Mo/Y/Si with respect to Mo/Si and B(4)C/Mo/B(4)C/Si multilayer structures.

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