Dual-tip magnetic force microscopy with suppressed influence on magnetically soft samples.

Standard magnetic force microscopy (MFM) is considered as a powerful tool used for magnetic field imaging at nanoscale. The method consists of two passes realized by the magnetic tip. Within the first one, the topography pass, the magnetic tip directly touches the magnetic sample. Such contact perturbs the magnetization of the sample explored. To avoid the sample touching the magnetic tip, we present a new approach to magnetic field scanning by segregating the topological and magnetic scans with two different tips located on a cut cantilever. The approach minimizes the disturbance of sample magnetization, which could be a major problem in conventional MFM images of soft magnetic samples. By cutting the cantilever in half using the focused ion beam technique, we create one sensor with two different tips--one tip is magnetized, and the other one is left non-magnetized. The non-magnetized tip is used for topography and the magnetized one for the magnetic field imaging. The method developed we call dual-tip magnetic force microscopy (DT-MFM). We describe in detail the dual-tip fabrication process. In the experiments, we show that the DT-MFM method reduces significantly the perturbations of the magnetic tip as compared to the standard MFM method. The present technique can be used to investigate microscopic magnetic domain structures in a variety of magnetic samples and is relevant in a wide range of applications, e.g., data storage and biomedicine.

Skyrmion Formation in Nanodisks Using Magnetic Force Microscopy Tip.

We demonstrated numerically the skyrmion formation in ultrathin nanodisks using a magnetic force microscopy tip. We found that the local magnetic field generated by the magnetic tip significantly affects the magnetization state of the nanodisks and leads to the formation of skyrmions. Experimentally, we confirmed the influence of the local field on the magnetization states of the disks. Micromagnetic simulations explain the evolution of the magnetic state during magnetic force microscopy scanning and confirm the possibility of skyrmion formation. The formation of the horseshoe magnetic domain is a key transition from random labyrinth domain states into the skyrmion state. We showed that the formation of skyrmions by the magnetic probe is a reliable and repetitive procedure. Our findings provide a simple solution for skyrmion formation in nanodisks.

50-nm local anodic oxidation technology of semiconductor heterostructures.

A novel approach to local anodic oxidation technique, which leads to approximately equal 50 nm wide line patterns, is described. The technique is utilized to prepare quantum point contact on a low-mobility semiconductor heterostructure. Transport measurements show quantized conductance in zero magnetic field at 4.2 K thanks to very short one-dimensional constriction. The technique is also used for the definition of low-to-room temperature sub-micrometer Hall probes to show its applicability for the room temperature applications. The magnetic-field resolution and the sensitivity of the probes are evaluated in dependence of the probe dimensions, bias current, and temperature. The 200-nm probe shows magnetic-field resolution of 47 microT/(Hz)(1/2) at 140 Hz and at 4.2 K, when it is driven by 5 microA bias current. The novel approach is promising for the development of the future nano-devices operated both at low and room temperatures. To our knowledge, local anodic oxidation technique applied directly to shallow semiconductor heterostructure has been successfully used for the room temperature application for the first time.

Local anodic oxidation by AFM tip developed for novel semiconductor nanodevices.

The local anodic oxidation (LAO) by the tip of atomic force microscope (AFM) is used for fabrication of nanometer-scaled structures and devices. We study the technology of LAO applied to semiconductor heterostructures, theoretically and experimentally as well. The goal is to improve the LAO process itself, i.e., to create narrow LAO lines that form high-energy barriers in the plane with the 2D electron gas. In the first part we show the electric field distribution in the system tip-sample during LAO. For samples with low-conductive cap layer the maximum electric field is shifted apart the tip apex, which leads to wide oxide lines. Our Monte Carlo (MC) calculations show how the height of the energy barrier in the system depends on the geometry of the created lines (trenches), and on voltage applied to the structure. Based on the calculations, we have proposed a novel LAO technology and applied it to InGaP/AlGaAs/GaAs heterostructure with doping layer only 6 nm beneath the surface. The doping layer can be oxidized easily by the AFM tip in this case, and the oxide objects can be removed by several etchants. This approach to the LAO technology leads to narrow LAO trenches (approximately 60 nm) and to energy barriers high enough for room- and low-temperature applications.

New approach to local anodic oxidation of semiconductor heterostructures.

We have experimentally explored a new approach to local anodic oxidation (LAO) of a semiconductor heterostructures by means of atomic force microscopy (AFM). We have applied LAO to an InGaP/AlGaAs/GaAs heterostructure. Although LAO is usually applied to oxidize GaAs/AlGaAs/GaAs-based heterostructures, the use of the InGaP/AlGaAs/GaAs system is more advantageous. The difference lies in the use of different cap layer materials: Unlike GaAs, InGaP acts like a barrier material with respect to the underlying AlGaAs layer and has almost one order of magnitude lower density of surface states than GaAs. Consequently, the InGaP/AlGaAs/GaAs heterostructure had the remote Si-delta doping layer only 6.5 nm beneath the surface and the two-dimensional electron gas (2DEG) was confined only 23.5 nm beneath the surface. Moreover, InGaP unaffected by LAO is a very durable material in various etchants and allows us to repeatedly remove thin portions of the underlying AlGaAs layer via wet etching. This approach influences LAO technology fundamentally: LAO was used only to oxidize InGaP cap layer to define very narrow (approximately 50 nm) patterns. Subsequent wet etching was used to form very narrow and high-energy barriers in the 2DEG patterns. This new approach is promising for the development of future nano-devices operated both at low and high temperatures.

Asymmetry in Time Evolution of Magnetization in Magnetic Nanostructures.

Strong interest in nanomagnetism stems from the promise of high storage densities of information through control of ever smaller and smaller ensembles of spins. There is a broad consensus that the Landau-Lifshitz-Gilbert equation reliably describes the magnetization dynamics on classical phenomenological level. On the other hand, it is not so evident that the magnetization dynamics governed by this equation contains built-in asymmetry in the case of broad topology sets of symmetric total energy functional surfaces. The magnetization dynamics in such cases shows preference for one particular state from many energetically equivalent available minima. We demonstrate this behavior on a simple one-spin model which can be treated analytically. Depending on the ferromagnet geometry and material parameters, this asymmetric behavior can be robust enough to survive even at high temperatures opening simplified venues for controlling magnetic states of nanodevices in practical applications. Using micromagnetic simulations we demonstrate the asymmetry in magnetization dynamics in a real system with reduced symmetry such as Pacman-like nanodot. Exploiting the built-in asymmetry in the dynamics could lead to practical methods of preparing desired spin configurations on nanoscale.