Quantum Spin Hall States and Topological Phase Transition in Germanene.

We present the first experimental evidence of a topological phase transition in a monoelemental quantum spin Hall insulator. Particularly, we show that low-buckled epitaxial germanene is a quantum spin Hall insulator with a large bulk gap and robust metallic edges. Applying a critical perpendicular electric field closes the topological gap and makes germanene a Dirac semimetal. Increasing the electric field further results in the opening of a trivial gap and disappearance of the metallic edge states. This electric field-induced switching of the topological state and the sizable gap make germanene suitable for room-temperature topological field-effect transistors, which could revolutionize low-energy electronics.

Tunability of topological edge states in germanene at room temperature.

Germanene is a two-dimensional topological insulator with a large topological band gap. For its use in low-energy electronics, such as topological field effect transistors and interconnects, it is essential that its topological edge states remain intact at room temperature. In this study, we examine these properties in germanene using scanning tunneling microscopy and spectroscopy at 300 K and compare the results with data obtained at 77 K. Our findings show that the edge states persist at room temperature, although thermal effects cause smearing of the bulk band gap. Additionally, we demonstrate that, even at room temperature, applying an external perpendicular electric field switches the topological states of germanene off. These findings indicate that germanene's topological properties can be maintained and controlled at room temperature, making it a promising material for low-energy electronic applications.

Charge Localization Induced by Pentagons on Ge(110).

The Ge(110) surface reconstructs into ordered and disordered phases, in which the basic unit is a five-membered ring of Ge atoms (pentagon). The variety of surface reconstructions leads to a rich electronic density of states with several surface states. Using scanning tunneling microscopy and spectroscopy, we have identified the exact origins of these surface states and linked them to either the Ge pentagons or the underlying Ge-Ge bonds. We show that even moderate fluctuations in the positions of the Ge pentagonal units induce large variations in the local density of states. The local density of states modulates in a precise manner, following the geometrical constraints on tiling Ge pentagons. These geometry-correlated electronic states offer a vast configurational landscape that could provide new opportunities in data storage and computing applications.